Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

Bosser, Alexandre Louis; Gupta, Viyas; Javanainen, Arto; Tsiligiannis, Georgios; LaLumondiere, Stephen; Brewe, Dale; Ferlet-Cavrois, V.; Puchner, H.; Kettunen, H.; Gil, Thierry; Wrobel, Frédéric; Saigné, Frédéric; Virtanen, A.; Dilillo, Luigi

doi:10.1109/tns.2018.2797543

Cited by 14 publications

(6 citation statements)

References 12 publications

(14 reference statements)

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“…The occurrence of SELs on an MRAM (Magnetoresistive Random Access Memory) is presented in [30]. Additionally, radiation-induced SEEs in a COTS FRAM (Ferroelectric Random Access Memory) are described in [31]. Studies on these memories show that SEEs can occur in different ways, such as SBUs, Multiple Cell Upsets (MCUs), SEFIs, or SELs, and it generates different kinds of fault behaviors on the devices.…”

Section: Radiation-induced Effects On Memoriesmentioning

confidence: 99%

Impact of Atmospheric and Space Radiation on Sensitive Electronic Devices

Luza

Wrobel

Entrena

et al. 2022

2022 IEEE European Test Symposium (ETS)

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Studying the radiation effects on electronic devices is essential for avionics and space systems. The shrinking technology nodes and increasing density of devices enhance the sensitivity of electronic systems to ionizing radiation. Due to their crucial role, memories and processors are the highest contributors to soft errors in systems, making them the best candidates for studying these effects. This work introduces the radiation environment in space and atmosphere and the main effects that the different types of ionizing particles that are present in these environments may produce on electronic devices. Furthermore, mainly focusing on Single-Event Effects (SEEs), it presents approaches and tools for modeling SEEs and their impact on memories and microprocessors. Additionally, experimental results targeting a Commercial-Off-The-Shelf self-refresh Dynamic RAM are presented. These experiments are based on radiation test campaigns in particle accelerators with neutrons and protons. Finally, an overview of issues and mitigation techniques for microprocessors is exposed.

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Section: Radiation-induced Effects On Memoriesmentioning

confidence: 99%

Impact of Atmospheric and Space Radiation on Sensitive Electronic Devices

Luza

Wrobel

Entrena

et al. 2022

2022 IEEE European Test Symposium (ETS)

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“…The results indicate that SEUs and SEFIs happened during these tests. Also, the failure modes of a COTS 130-nm FM22L16 FRAM under heavy ions and pulsed focused X-ray beams were executed in [16]. Mixed failure modes were observed in several types involving individual bits, isolated words, groups of pages, 1-bit-wide columns, entire regions of the memory array, and SEFIs.…”

Section: ) Radiation Effects On Framsmentioning

confidence: 99%

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

et al. 2022

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In New Space, the need for reduced cost, higher performance, and more prompt delivery plans in radiation-harsh environments have motivated spacecraft designers to use Commercial-Off-The-Shelf (COTS) memories and emerging technology devices. This paper investigates the behavior of state-of-the-art memories manufactured in emerging technologies, including Ferroelectric Random-Access Memory (FRAM), Resistive Random-Access Memory (ReRAM), and Magnetic Random-Access Memory (MRAM), against radiation effects in static and dynamic modes. Radiation-ground tests were conducted under 15-MeV and 1-MeV protons, thermal and 14.8-MeV neutrons leading to various categories of radiation effects. Experimental results will show clear evidence of the robustness of bitcells manufactured using these emerging technologies against radiation, but at the same time, some susceptibility in these devices to suffer radiation effects when working in dynamic mode. Experimental results with the CY15B102Q and CY15B104Q FRAMs (Infineon Technologies), the MB85AS4MT, and MB85AS8MT ReRAMs (Fujitsu), and the MR10Q010CSC and MR25H40CDF MRAMs (Everspin) will be presented and discussed.

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“…random-access memory (RRAM), [4][5][6] magnetic random-access memory (MRAM), [7][8][9] and ferroelectric random-access memory (FeRAM), [10,11] which were widely concerned. At present, as one of the candidates for the next-generation non-volatile memory, RRAM had a great advantage in terms of simple structure, which was demonstrated to exhibit excellent miniaturization potential down to <10 nm.…”

Section: Doi: 101002/aelm201900756mentioning

confidence: 99%

“…However, as the feature size scaled down, flash technology was facing the challenge of scalability. Therefore, it was urgent to study the next‐generation of non‐volatile storage technologies for the demand of high capacity storage such as phase change memory (PCM), resistive random‐access memory (RRAM), magnetic random‐access memory (MRAM), and ferroelectric random‐access memory (FeRAM), which were widely concerned. At present, as one of the candidates for the next‐generation non‐volatile memory, RRAM had a great advantage in terms of simple structure, which was demonstrated to exhibit excellent miniaturization potential down to <10 nm.…”

Section: Introductionmentioning

confidence: 99%

Multi‐Functional Controllable Memory Devices Applied for 3D Integration Based on a Single Niobium Oxide Layer

Chen

Zhang

et al. 2019

Adv Elect Materials

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Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

Abstract: This is a self-archived version of an original article. This version may differ from the original in pagination and typographic details.

Cited by 14 publications

References 12 publications

Impact of Atmospheric and Space Radiation on Sensitive Electronic Devices

Impact of Atmospheric and Space Radiation on Sensitive Electronic Devices

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

Multi‐Functional Controllable Memory Devices Applied for 3D Integration Based on a Single Niobium Oxide Layer

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