Single Event Effects in 4T Pinned Photodiode Image Sensors

Abstract

This paper describes how Single Event Effects (SEEs) produced by heavy ions disturb the operation of Pinned Photodiode (PPD) CMOS Image Sensors (CISs) in the frame of space and nuclear applications. Several CISs with 4T and 5T pinned photodiode pixels were exposed to ions with a broad Linear Energy Transfer range (3.3 to 67.7 MeV.cm²/mg). One sensor exhibited Single Event Latchups (SELs). Physical failure mechanism and latchup properties were investigated. SELs are caused by the level shifters of the addressing circuits, which create frame perturbations-following which, in some cases, parts of the addressing circuits need to be hardened. In the second part of the paper, the effects of anti-blooming capabilities on the Single Event Transient effects (SETs) are analyzed. SETs in pixels can be partially mitigated by anti-blooming through the transfer gate and/or a dedicated transistor. This work also shows that the number of pixels disturbed by SETs can be reduced by using appropriate anti-blooming techniques.

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

“…The Final perspective presented by the authors is a comparison of different epitaxial thicknesses. In a more recent study [15], the authors investigated SETs in PPD CIS with anti-blooming function, from different foundries. The study reveals that the anti-blooming function can reduce the size of the SET cluster.…”

“…Smart imagers integrating electronic functions therefore need to be evaluated to determine their tolerance to both dose and single event effects. Numerous studies deal with ionizing and non-ionizing dose effects [5]- [10] while only a few discuss single events [12]- [15]. Earlier studies [12] [13] have focused on radiation-tolerant devices using hardening-by-design techniques.…”

“…Earlier studies [12] [13] have focused on radiation-tolerant devices using hardening-by-design techniques. More recent ones [14] [15] are dedicated to single event effects in basic pixel array structures. However, no dedicated study evaluates these effects in last generation digital imagers integrating electronic functions such as column ADCs, microcontrollers and registers.…”

Heavy Ion Single Event Effects in CMOS Image Sensors: SET and SEU

“…Complementary metal oxide semiconductor (CMOS) image sensors (CISs) are widely used in spacecraft imaging systems such as remote sensing imaging and star-sensitive vehicles due to their excellent system performance in terms of power consumption, size, and quality [1,2]. However, the high-energy particle radiation environment in space, such as high-energy protons and heavy ions, can induce single event effects (SEEs) in CISs, which can affect the performance of CISs and even cause functional failure [3][4][5].…”