Single electron transistors with ultra-thin Au nanowires as a single Coulomb island

Abstract

Single electron transistors exhibiting transport properties based on a single Coulomb island have been fabricated using ultra-thin gold nanowires (AuNWs), which are synthesized via a chemical reduction process. The AuNWs are bottom-contacted with source and drain electrodes to avoid damaging the AuNWs under fabrication processes. We investigate the transport properties in the fabricated devices as a function of the bias and gate voltages at room and low temperatures. At 0.23 K, the periodical Coulomb oscillations and diamonds are clearly observed indicating that an individual AuNW acts as a single Coulomb island. These transport properties can be explained by the orthodox Coulomb blockade theory.

Directed Assembly of Single Colloidal Gold Nanowires by AFM Nanoxerography

“…11 Based on these approaches, the conduction properties of Au NW bundles, were recently reported. 12,13,14,15,16 However, the experimental demonstration of clear correlations between the high aspect ratio of the nanowires and their conduction properties still requires measurements on individual nanowires.…”

“…Regarding the first step of deposition and localization, studies have mainly focused on the deposition of NWs by drop casting, liquid–air interphase evaporation, Langmuir–Blodgett, or microfluidic techniques . Based on these approaches, the conduction properties of Au NW bundles, were recently reported. − However, the experimental demonstration of clear correlations between the high aspect ratio of the nanowires and their conduction properties still requires measurements on individual nanowires.…”

Analysis and Investigation of Electronic Transport Coulomb Blockade in Al68 Based on DFT

“…Figure shows the curve of electron injection and ejection barrier with the variation of the charged state of the Al 68 cluster. The height of electron injection barrier shows a linear relationship with the charged state, which corresponds to the gate voltage, presenting equal intervals in the Coulomb blockade effect . In the system discussed in this paper, the electron injection barrier will increase with the increase of systematic electric quantity, but the electron ejection barrier will decrease.…”