Single-electron transistor based on a single cluster molecule at room temperature

Soldatov, E. S.; Khanin, V. V.; Trifonov, A. S.; Presnov, D. E.; Yakovenko, S.A.; Хомутов, Г.Б.; Gubin, C. P.; Kolesov, Vladimir

doi:10.1134/1.567234

Cited by 63 publications

(38 citation statements)

References 7 publications

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“…In STM experiments steps in the IV are generally observed and identified as Coulomb staircases. 26 In our case, steps may also be due to vibrational modes of the molecules (see also discussion next section).…”

Section: Molecular Junctions With Oligo(cyclohexylidene)mentioning

confidence: 88%

Molecular three-terminal devices: fabrication and measurements

et al. 2006

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Incorporation of a third, gate electrode in the device geometry of molecular junctions is necessary to identify the transport mechanism. At present, the most popular technique to fabricate three-terminal molecular devices makes use of electromigration. Although it is a statistical process, we show that control over the gap resistance can be obtained. A detailed analysis of the current-voltage characteristics of gaps without molecules, however, shows that they reveal features that can mistakenly be attributed to molecular transport. This observation raises questions about which gaps with molecules can be disregarded and which not. We show that electrical characteristics can be controlled by the rational design of the molecular bridge and that vibrational modes probed by electrical transport are of potential interest as molecular fingerprints.

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Section: Molecular Junctions With Oligo(cyclohexylidene)mentioning

confidence: 88%

Molecular three-terminal devices: fabrication and measurements

et al. 2006

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“…If an electrode gap can be formed by mechanical breaking alone, excessive heating and the formation of nanoscale clusters can be avoided. To date, gating with mechanical control has been demonstrated in a STM [14] and in gated MCBJs on 200 μm thick silicon substrates [15].…”

Section: Introductionmentioning

confidence: 99%

Sandwich-type gated mechanical break junctions

2010

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We introduce a new device architecture for the independent mechanical and electrostatic tuning of nanoscale charge transport. In contrast to previous gated mechanical break junctions with suspended source-drain electrodes, the devices presented here prevent an electromechanical tuning of the electrode gap by the gate. This significant improvement originates from a direct deposition of the source and the drain electrodes on the gate dielectric. The plasma-enhanced native oxide on the aluminum gate electrode enables measurements at gate voltages up to 1.8 V at cryogenic temperatures. Throughout the bending-controlled tuning of the source-drain distance, the electrical continuity of the gate electrode is maintained. A nanoscale island in the Coulomb blockade regime serves as a first experimental test system for the devices, in which the mechanical and electrical control of charge transport is demonstrated.

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“…1) with a metallic gate controlling the electron tunneling from the STM tip to the substrate via single carboran cluster molecule (see also Ref. [13]). …”

mentioning

confidence: 99%

Room temperature molecular single-electron transistor

Soldatov¹,

Khanin²,

Trifonov³

et al. 1998

Phys.-Usp.

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A room temperature single-electron transistor based on the single cluster molecule has been demonstrated for the first time. Scanning tunneling microscope tip was used to study the transport via single carboran cluster molecule 1,7-(CH 3 ) 2 -1,2-C 2 B 10 H 9 Tl(OCOCF 3 ) 2 incorporated into the Langmuir-Blodgett monolayer of the stearic acid. DC I-V curves at 300 K showed well pronounced Coulomb staircase, and the current could be controlled by a lithographically fabricated gold gate electrode. 73.40.Gk, 61.16.Ch, 36.40.Cg Typeset using REVT E X 1

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Single-electron transistor based on a single cluster molecule at room temperature

Cited by 63 publications

References 7 publications

Molecular three-terminal devices: fabrication and measurements

Molecular three-terminal devices: fabrication and measurements

Sandwich-type gated mechanical break junctions

Room temperature molecular single-electron transistor

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