1986
DOI: 10.1049/el:19860156
|View full text |Cite
|
Sign up to set email alerts
|

Single-drift flat-profile GaAs impatt diodes at 90 GHz

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
4
0

Year Published

1989
1989
2020
2020

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 21 publications
(4 citation statements)
references
References 8 publications
0
4
0
Order By: Relevance
“…A double iterative computer method [15] has been employed to numerically solve the second-order differential equations ( 2 ) and (3) subject to the boundary conditions given by (5) and (6). The computation is initiated at the nn+ interface and terminated at the np+ interface of pfnn+ diode.…”
Section: Methods Of Calculation Of the Negative Resistance Profilesmentioning
confidence: 99%
See 2 more Smart Citations
“…A double iterative computer method [15] has been employed to numerically solve the second-order differential equations ( 2 ) and (3) subject to the boundary conditions given by (5) and (6). The computation is initiated at the nn+ interface and terminated at the np+ interface of pfnn+ diode.…”
Section: Methods Of Calculation Of the Negative Resistance Profilesmentioning
confidence: 99%
“…The avalanche zone widths for different values of M, and Mp are determined from J d i r ( x ) / J~ profiles. Once the depletion layer widths are fixed and the dc parameters at the boundaries are known for different situations described in the boundary conditions (1 l), (12), and (13), simultaneous numerical solutions of equations (3) and (4) are carried out with double iterations over the initial choice of R and X at one boundary till the conditions (5) and (6) are satisfied at the other boundary with proper accuracy. Computer simulation methods are used for calculating the R ( x ) and X ( x ) profiles in the depletion layer of the unilluminated and illuminated diodes.…”
Section: Methods Of Calculation Of the Negative Resistance Profilesmentioning
confidence: 99%
See 1 more Smart Citation
“…Positive series resistance (R S ) is a crucial parameter that characterizes the serious power loss in the substrates and in the metallic contact layers and therefore restricts the output power density. The exact series resistance is difficult to define as it can vary with the doping profile, current density, contact technology used and the chip mounting conditions [21,22]. However, from the device side, R S mostly consists of the summation of substrate (n + ) resistance, un-depleted epitaxial layer resistance and ohmic contact resistances.…”
Section: Semiconductor Propertymentioning
confidence: 99%