Single-drift flat-profile GaAs impatt diodes at 90 GHz

Eisele, H.; Freyer, J.

doi:10.1049/el:19860156

Cited by 21 publications

(4 citation statements)

References 8 publications

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“…A double iterative computer method [15] has been employed to numerically solve the second-order differential equations ( 2 ) and (3) subject to the boundary conditions given by (5) and (6). The computation is initiated at the nn+ interface and terminated at the np+ interface of pfnn+ diode.…”

Section: Methods Of Calculation Of the Negative Resistance Profilesmentioning

confidence: 99%

“…The avalanche zone widths for different values of M, and Mp are determined from J d i r ( x ) / J~ profiles. Once the depletion layer widths are fixed and the dc parameters at the boundaries are known for different situations described in the boundary conditions (1 l), (12), and (13), simultaneous numerical solutions of equations (3) and (4) are carried out with double iterations over the initial choice of R and X at one boundary till the conditions (5) and (6) are satisfied at the other boundary with proper accuracy. Computer simulation methods are used for calculating the R ( x ) and X ( x ) profiles in the depletion layer of the unilluminated and illuminated diodes.…”

Section: Methods Of Calculation Of the Negative Resistance Profilesmentioning

confidence: 99%

“…The leakage current of an IMPATT diode can be increased by illuminating its active area by a helium-neon laser beam, thereby generating a photocurrent between 100 and 200 pA [4]. Experimental results show that the enhancement of leakage current due to photogenerated carriers leads to the reduction of output power and the shift of the oscillation frequency of a silicon X-band IMPATT diode [5] and a millimeter wave gallium arsenide IMPATT diode [6]. The computer simulation results for these diodes corroborate the above fact [7].…”

Section: Introductionmentioning

confidence: 99%

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Studies on avalanche phase delay and the admittance of an optically illuminated indium phosphide avalanche transit time diode at millimeter wave window frequencies

Banerjee

Mukherjee

Mukhopadhyay

et al. 1996

Phys. Stat. Sol. (a)

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An attempt is made to study the shift of the avalanche transit time (Am) phase delay and the modulation of the high frequency properties of single drift indium phosphide A'IT diodes at 94 and 140 GHz window frequencies due to optical illumination. The study is based on a numerical simulation of the negative specific resistance profiles and the conductance-susceptance characteristics of the diode for different hole and electron current multiplication factors. The results indicate that the predominant hole photocurrent has a more pronounced effect in the 94 GHz diode as compared to the 140 GHz diode as regards the shift of avalanche phase delay, frequency chirping, narrowing of the avalanche zone, and decrease of the total negative resistance per unit area of the device.') 92,

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Section: Methods Of Calculation Of the Negative Resistance Profilesmentioning

confidence: 99%

Section: Methods Of Calculation Of the Negative Resistance Profilesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Studies on avalanche phase delay and the admittance of an optically illuminated indium phosphide avalanche transit time diode at millimeter wave window frequencies

Banerjee

Mukherjee

Mukhopadhyay

et al. 1996

Phys. Stat. Sol. (a)

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“…Positive series resistance (R S ) is a crucial parameter that characterizes the serious power loss in the substrates and in the metallic contact layers and therefore restricts the output power density. The exact series resistance is difficult to define as it can vary with the doping profile, current density, contact technology used and the chip mounting conditions [21,22]. However, from the device side, R S mostly consists of the summation of substrate (n + ) resistance, un-depleted epitaxial layer resistance and ohmic contact resistances.…”

Section: Semiconductor Propertymentioning

confidence: 99%

α-SiC nanoscale transit-time diodes: performance of the photo-irradiated terahertz sources at elevated temperature

Mukherjee¹,

Mazumder²,

Roy³

2010

Semicond. Sci. Technol.

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The effects of elevated junction temperature on the terahertz (THz) frequency characteristics of α-(hexagonal, 4H and 6H) silicon carbide (SiC) based double-drift region (DDR, p ++ p n n ++ type) impact ionization avalanche transit-time (IMPATT) devices are studied and compared for the first time through simulation experiments. This study reveals that at 300 K < T < 600 K, a 4H-SiC IMPATT diode may yield 3.5 W of output power (efficiency (η) ∼ 8.6%) at 1.3 THz, while its 6H-SiC counterpart can deliver 3 W of output power (η = 6.3%) at 1.2 THz. It is interesting to observe that at elevated temperature, the performance of a 6H-SiC IMPATT diode degrades more in comparison with its 4H-SiC counterpart. These comparative analyses reveal the superiority of 4H-SiC diodes over their 6H-SiC counterparts, and thus establish the potential of the former as a high-power THz IMPATT oscillator even in harsh environments. Mobile space charge effects and the effect of positive series resistance on the high-temperature performance of the THz devices are also simulated, and it is found that series resistance reduces the output power level of the diodes by at least 15.0%. Moreover, the effects of increased junction temperature on the photo-sensitivity of top mounted (TM) and flip chip (FC) α-SiC IMPATTs are also investigated using a modified simulation technique. The device operating frequencies, under TM illumination configuration, shifts upward by at least 40.0 GHz, whereas the operating frequency shifts upward by at least 100.0 GHz under FC illumination configuration. The simulation results and the proposed experimental methodology presented here may be used for realizing optically controlled α-SiC transit-time devices for application in THz communication.

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Neue Einbautechniken für Millimeterwellenbauelemente

Freyer

Tschernitz

1993

Archiv f. Elektrotechnik

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Single-drift flat-profile GaAs impatt diodes at 90 GHz

Cited by 21 publications

References 8 publications

Studies on avalanche phase delay and the admittance of an optically illuminated indium phosphide avalanche transit time diode at millimeter wave window frequencies

Studies on avalanche phase delay and the admittance of an optically illuminated indium phosphide avalanche transit time diode at millimeter wave window frequencies

α-SiC nanoscale transit-time diodes: performance of the photo-irradiated terahertz sources at elevated temperature

Neue Einbautechniken für Millimeterwellenbauelemente

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