Single CuO_x Nanowire Memristor: Forming-Free Resistive Switching Behavior

Abstract

CuOx nanowires were synthesized by a low-cost and large-scale electrochemical process with AAO membranes at room temperature and its resistive switching has been demonstrated. The switching characteristic exhibits forming-free and low electric-field switching operation due to coexistence of significant amount of defects and Cu nanocrystals in the partially oxidized nanowires. The detailed resistive switching characteristics of CuOx nanowire systems have been investigated and possible switching mechanisms are systematically proposed based on the microstructural and chemical analysis via transmission electron microscopy.

Ultrathin Cu2O as an efficient inorganic hole transporting material for perovskite solar cells

“…We also tried onestep method by spin-coating the mixed solution of PbCl 2 and CH 3 NH 3 I onto ITO/Cu 2 O, but no pure perovskite phase was achieved after annealing at 100 °C, which might be related to the surface properties of Cu 2 O films. [38][39][40] Further optimization of device performance was thus focused on using the two-step method since the residual PbI 2 provides the beneficial effect of passivation.…”

Transmission Electron Microscopy on Memristive Devices: An Overview

“…Layerbased samples may be prepared by cross-sectional PIPS preparation; other techniques might be especially useful for devices that are not layer-based, like memristors made from nanostructures, such as single nanorods or -wires as these are representing easy to prepare horizontal devices (Kim et al, 2012;Liang et al, 2014;Yan et al, 2011). Investigations on such memristors are further discussed in section III-A-3.…”

“…entire networks of switchable structures are used. They can frequently be deposited right on top of electron transparent membranes as parts of TEM sample grids without any need for careful placement (Avizienis et al, 2012;Liang et al, 2014;Sun et al, 2007). Alternatively, the nanowires can be randomly dispersed and the electrodes are deposited and shaped in a later stage with lithographic means (Chiang et al, 2011).…”

“…In terms of TEM analysis these devices are advantageous because they forestall the need for complicated and time-consuming crosssectional specimen preparation if deposited directly onto electron transparent membranes. Horizontal memristive devices have been realized with switching nano-structures containing Ag wires (Avizienis et al, 2012), CuO nanowires (Fan et al, 2013;Liang et al, 2014), ZnO nanowires (Chiang et al, 2011), TiO 2 (Lin et al, 2016), Cu 2 S nanowires (Liu et al, 2015), GeTe nanowires (Sun et al, 2007), and Ge/Si nanowires (Yan et al, 2011). The large variety of material systems analyzed underlines the flexibility and relative ease with which such investigations can be conducted.…”

Sustained Resistive Switching in a Single Cu:7,7,8,8-tetracyanoquinodimethane Nanowire: A Promising Material for Resistive Random Access Memory

“…Materials which exhibit switching from OFF state to ON state with hysteresis can be used to make memory devices like non-volatile read-only-memory (ROM)678. A material or a device that shows high ON/OFF current ratio, low threshold voltage for switching and large cycling endurance is desirable candidate for fabricating memory devices5.…”