Single‐Crystalline ZnS Nanobelts as Ultraviolet‐Light Sensors

Fang, Xiaosheng; Bando, Yoshio; Liao, Meiyong; Gautam, Ujjal K.; Chen, Zhi; Dierre, Benjamin; Liu, Baodan; Zhai, Tianyou; Sekiguchi, Takashi; Koide, Yasuo; Golberg, Dmitri

doi:10.1002/adma.200802441

Cited by 538 publications

(425 citation statements)

References 42 publications

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“…Interstitial sulfur atoms are formed through the decomposition of H 2 S, as shown in reaction (2). And sulfur vacancies appear in ZnS because of reaction (3). As a result, ZnS-873 and ZnS-973 may contain little sulfur vacancies while interstitial sulfur and sulfur vacancies might coexist in ZnS-1073 and ZnS-1173 particles.…”

Section: Structure and Morphology Of Zns Nanocrystalsmentioning

confidence: 99%

“…Tailoring the color output of nanomaterials is very important for their applications as light emitting displays, field emitters, 1,2 lasers, sensors 3 and optoelectronic devices to multiplexed biological labeling. [4][5][6][7] Zinc sulfide (ZnS) is a suitable semiconductor as a host matrix for a wide variety of dopants on account of its wide energy band gap.…”

Section: Introductionmentioning

confidence: 99%

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Visible emission characteristics from different defects of ZnS nanocrystals

Wang

Shi

Feng

et al. 2011

Phys. Chem. Chem. Phys.

162

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Various sized ZnS nanocrystals were prepared by treatment under H 2 S atmosphere. Resonance Raman spectra indicate that the electron-phonon coupling increases with increasing the size of ZnS. Surface and interfacial defects are formed during the treatment processes. Blue, green and orange emissions are observed for these ZnS. The blue emission (430 nm) from ZnS without treatment is attributed to surface states. ZnS sintered at 873 K displays orange luminescence (620 nm) while ZnS treated at 1173 K shows green emission (515 nm). The green luminescence is assigned to the electron transfer from sulfur vacancies to interstitial sulfur states, and the orange emission is caused by the recombination between interstitial zinc states and zinc vacancies. The lifetimes of the orange emission are much slower than that of the green luminescence and sensitively dependent on the treatment temperature. Controlling defect formation makes ZnS a potential material for photoelectrical applications.

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Section: Structure and Morphology Of Zns Nanocrystalsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Visible emission characteristics from different defects of ZnS nanocrystals

Wang

Shi

Feng

et al. 2011

Phys. Chem. Chem. Phys.

162

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“…A typical I-V curve for the twoterminal structure under an EBI (10 keV), as shown in Figure 3b, indicates that the irradiation-induced current can reach 9.5 pA with a bias of 25 V. It was also found that the dark current was beyond the current meter's detecting limit (10 − 14 A); these results are in agreement with the published results in the literature. 24 By switching the electron beam on and off, the device showed a good repeatability (Figure 3c) and fast response (o1 s), as determined from the enlarged portions of the rise and fall in Supplementary Figure S5. In this study, these twoterminal devices cannot be completely turned off; however, a residual current was detected as a result of the high-energy irradiation.…”

Section: Resultsmentioning

confidence: 99%

Polar-surface-driven growth of ZnS microsprings with novel optoelectronic properties

Zhang

Cong

et al. 2015

NPG Asia Mater

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Small perturbations during the growth kinetics of low-dimensional semiconductor structures may lead to novel features, which may provide an ideal system for understanding the fundamental physics of optical phenomena in optoelectronics devices. In this study, we report deformation-free single-crystal zinc sulfide (ZnS) microsprings produced by a polar-surface-driven growth process, and we thoroughly investigate the electrical characteristics of individual ZnS microsprings under electron beam irradiation and their initial applications in ultraviolet (UV) light sensors and waveguides. The microsprings produced are formed by a block-by-block stacking process following a hexagonal screw model that does not introduce distortion into the crystal lattices. The first photodetectors designed based on a single ZnS microspring exhibit a high spectral selectivity combined with a high photosensitivity and a fast response time (o0.3 s) under 320-nm illumination, which make ZnS microsprings particularly valuable as UV-light sensors. Concurrently, excellent waveguide performance along the fiber of a single ZnS microspring (for example,~0.13 dB μm − 1 at 450 nm, and~0.17 dB μm − 1 at 520 nm) is demonstrated for the first time. The high crystal quality, the fast response to UV light and the low propagation loss exhibited by ZnS microsprings indicate that they have important potential applications in nano-optoelectronic systems. NPG Asia Materials (2015) 7, e213; doi:10.1038/am.2015.100; published online 4 September 2015 INTRODUCTIONOne-dimensional semiconductor structures provide new opportunities to exploit the chemical and physical properties of materials at the micro-and nano-scales, making them promising candidates for future optoelectronic devices that take advantage of the well-controlled size, morphology and geometries of these materials. 1,2 The most recent studies have shown that bent nanowires or nanobelts can exhibit novel optical and electrical properties compared with their unbent counterparts, thus appreciably widening their potential applications in optoelectronic systems because optoelectronic characteristics in lowdimensional materials are particularly sensitive to crystallinity and electronic structures. 3 For example, in the photoluminescence spectra of bending wurtzite micro/nanowires, a red shift of the near-band energy induced by deformation has been shown to have a linear relation between the peak shift and the strain gradient. 4 Because the peaks of the photoluminescence spectra are near the band gap of these materials, such a linear correlation between the band gap and strain gradient could provide an alternative method in optoelectronics, such as enhanced photodetectors. 5 Conversely, from both scientific and practical viewpoints, one-dimensional structures are ideal materials to measure the optical gains of miniaturized lasers and light amplification due to their strong ability to confine electrons, holes and photons.

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“…Among these, semiconductors are the most excellent material showing appreciable modification in the optical and electronic properties through the alteration in the energy band gap via doping with other foreign metals. Recently semiconducting nanocrystalline materials have immensely attracted the interest in electronics and photonics application [1] such as light emitting diodes [2], photonics [3], chemical, biological and UV sensors [4], phosphors in displays and also in biomedical applications for biological labelling [5], diagnostics [6].…”

Section: Introductionmentioning

confidence: 99%

Influence of Co-Dopant on Structural, Optical and Electrochemical Properties of Zinc Sulphide Quantum Dots

Velusubhash¹,

Kalirajan²,

Harikengaram³

et al. 2018

JNST

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In the present work, solution based simple chemical precipitation method has been employed to prepare undoped, cobalt (Co)-doped and cobalt, nickel (Co, Ni) co-doped ZnS quantum dots (QDs). The XRD pattern revealed that all samples displayed cubic zinc blende structure. The average crystallite size of as prepared ZnS QDs were found to be in 1.0 to 1.4 nm range. Surface morphological of synthesized samples were recorded and some distinction in morphological features between undoped, doped and co-doped ZnS QDs were noticed. EDX analysis confirms the presence of all corresponding elements in the samples. The blue-shift in the absorption spectra was observed. The optical band gap energy (Eg) for all the hybrid ZnS QDs samples were evaluated by using UV-Visible optical absorption spectral data. In PL analysis, emission band at 660 nm was found to be quenched as ZnS QDs interact with dopant and co-dopant. Electrochemical analysis was carried out by transition of photogenerated electrons in undoped, cobalt (Co)-doped and cobalt, nickel (Co, Ni) co-doped ZnS QDs modified glassy carbon electrodes. To authenticate the results of PL and electrochemical studies, photocatalytic behaviour of QDs were studied and positive impact of doping and co-doping process on photo degradation were noticed and discussed.

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Single‐Crystalline ZnS Nanobelts as Ultraviolet‐Light Sensors

Cited by 538 publications

References 42 publications

Visible emission characteristics from different defects of ZnS nanocrystals

Visible emission characteristics from different defects of ZnS nanocrystals

Polar-surface-driven growth of ZnS microsprings with novel optoelectronic properties

Influence of Co-Dopant on Structural, Optical and Electrochemical Properties of Zinc Sulphide Quantum Dots

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