Single-crystalline semipolar GaN on Si(001) using a directional sputtered AlN intermediate layer

Mitsunari, Tadashi; Lee, H.J.; Honda, Yoshio; Amano, Hiroshi

doi:10.1016/j.jcrysgro.2015.08.027

Cited by 15 publications

(8 citation statements)

References 19 publications

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“…Since the structures grown on the template are determined by the quality of the mother layer, it may be questioned whether pulsed-mode growth can still be effectively carried out on low-quality templates with nanoscale thickness (<100 nm) and/or similar seed materials. 17 Once the feasibility of growing GaN nanorod arrays on ultrathin templates has been proved, several benefits can be expected in Si-based GaN epitaxy: (1) the availability of templates for physical deposition methods such as AlN sputtering; 28 (2) direct growth without strain relaxation layers (a stack of AlGaN layers is commonly used); (3) optical selectivity from the mother layer because of the large bandgap difference; (4) the realization of advanced device structures on nanoarray platforms such as novel III nitride/silicon tandem solar cells and vertical field-effect transistors. 29,30 In particular, the first and second benefits reduce costs owing to cheaper maintenance and simplified epilayers.…”

Section: Introductionmentioning

confidence: 99%

Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal–organic vapor deposition

et al. 2016

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Section: Introductionmentioning

confidence: 99%

Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal–organic vapor deposition

et al. 2016

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“…Without any ordering from the interface, the AlN layer wants to orient itself into (0001), since this orientation is obtained when sputtering at room temperature. 32) By gradually tilting to (0001), the next stable is the (10-14) orientation. The lattice mismatch of (10-14) AlN/sapphire is 9% along [11][12][13][14][15][16][17][18][19][20] sapphire (Table I).…”

Section: Discussionmentioning

confidence: 99%

“…27) However, direct growth on m-plane sapphire usually leads to a formation of twinned N-polar (10-1-3) GaN due to inherent twofold symmetry of the bonds at the GaN/sapphire interface. [28][29][30] Recently, untwinned (10-13) GaN layers were reported using directional sputtering on (001) Si [31][32][33] and m-plane sapphire. 34) Semi-polar orientations even more inclined towards (0001) have been only reported by planar growth on (112) and (113) Si.…”

Section: Introductionmentioning

confidence: 99%

Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers

Hu¹,

Dinh²,

Pristovsek³

et al. 2019

Jpn. J. Appl. Phys.

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We have studied the impact on the surface orientation of different sputtered Al layers followed by AlN layers sputtered on m-plane sapphire. These initial layers were then overgrown by AlN and followed by GaN using metal-organic vapor phase epitaxy (MOVPE). By increasing sputtering time of the initial Al layer from 0 s to 15 s, we obtained single phase (10-10), (10-13) and (10-14) GaN/AlN layers. The thickness of the initial Al layer was estimated by optical transmission measurements to be about 0.5-1 nm for the (10-13) orientation, and >1 nm for the (10-14) orientation. After MOVPE growth, no trace of metallic Al was found by transmission electron microscopy, indicating that this layer was fully converted to AlN.

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“…Nonpolar and semipolar GaN-based structures are usually grown on foreign lattice-mismatched substrates (bulk GaN substrates are generally expensive and small in size, not to even mention of the nonpolar and semipolar orientations) and thus suffer from insufficient quality, shared by polar orientation growth as well. Sputtered AlN buffers were found to be useful for MOCVD growth of nonpolar and semipolar GaN on Si [63][64][65] and sapphire substrates [66,67].…”

Section: Sputtered Aln Buffers For Growth Of Nonpolar and Semipolar Ganmentioning

confidence: 99%

Emergence of high quality sputtered III-nitride semiconductors and devices

Izyumskaya¹,

Avrutin²,

Ding³

et al. 2019

Semicond. Sci. Technol.

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This article provides an overview of recent development of sputtering method for high-quality III-nitride semiconductor materials and devices. Being a mature deposition technique widely employed in semiconductor industry, sputtering offers many advantages such as low cost, relatively simple equipment, non-toxic raw materials, low process temperatures, high deposition rates, sharp interfaces, and possibility of deposition on large-size substrates, including amorphous and flexible varieties. This review covers two major research directions: (1) ex situ sputtered AlN buffers to be used for subsequent growth of GaN-based structures by conventional techniques, such as metal-organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), or molecular beam epitaxy (MBE), and (2) deposition of the entire III-nitride layered stacks and device structures by sputtering. Replacing conventional in situ GaN or AlN buffer layers with ex situ sputtered AlN buffers for MOCVD, HVPE, or MBE growth of IIInitride films on sapphire and silicon substrates results in the improved crystal quality through reduction in dislocation density and residual strain. Extensive efforts in the field of sputter deposition of III-nitrides resulted in crystalline quality of sputtered III-nitride films compatible with that of MOCVD and MBE grown layers despite the lower temperatures used in sputtering. For example, sputtering techniques made it possible to achieve GaN layers heavily doped with Si and Ge to electron concentrations in mid-10 20 cm −3 range with mobilities exceeding 100 cm 2 V −1 s −1 , resulting in conductivities as high as those of benchmark transparent conducting oxides such as indium tin oxide (ITO). For moderate levels of doping with Si, mobilities comparable to state-of-the-art MOCVD-grown material have been demonstrated (up to ∼1000 cm 2 V −1 s −1 ). The first promising results have been reported for devices (light emitters and field effect transistors) entirely produced by sputtering.

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Single-crystalline semipolar GaN on Si(001) using a directional sputtered AlN intermediate layer

Cited by 15 publications

References 19 publications

Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal–organic vapor deposition

Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal–organic vapor deposition

Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers

Emergence of high quality sputtered III-nitride semiconductors and devices

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