Single-crystalline PbTe film growth through reorientation

Abstract

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In‐Plane Nanowire Growth of Topological Crystalline Insulator Pb1 − xSnxTe

“…[21] The crystalline quality of the PbSnTe system is comparable, for the whole compositional range, to what we have reported for the pure PbTe (on InP) system in Ref. [22]. Also in the PbSnTe system i) growth is initiated with many nuclei with different crystal orientations (111), (111)-twinned, and (100), as observed by SEM imaging; ii) the lattice mismatch between substrate and epilayer is accommodated by misfit dislocations at the InP/PbSnTe interface as evidenced by TEM studies; iii) after merging of the nuclei, large (111)-twinned-oriented PbSnTe crystals are formed, as evidenced from cross-sectional TEM studies.…”

Control of Ge island coalescence for the formation of nanowires on silicon

“…5d originates from a strain developed during the coalescence of islands. 66,67 Notably, the crystal quality that we observe in the present work is improved with respect to our previous work, where nanowire growth was carried out at 700 °C and the surface pretreatment step was performed at a lower temperature of 780 °C. 4 We attribute the improvement in the crystal quality to the optimization of the surface pretreatment step and alloying of the interface due to a higher growth temperature.…”

Selective-Area-Grown PbTe-Pb Planar Josephson Junctions for Quantum Devices

“…3,4 Selective area growth (SAG) of PbTe film has been previously achieved on InP, a substrate that is lattice-mismatched with PbTe. 42 In this work, the SAG PbTe film is grown on a lattice-matched substrate to minimize the disorder. The junction was defined using a shadow wall during in situ growth of the superconductor.…”

“…Here, we present the PbTe-Pb hybrid as a new planar JJ material platform for exploring topological superconductivity and other potential applications, such as gate tunable qubits. − While the PbTe-Pb hybrid has recently been proposed in its nanowire form as a Majorana candidate with promising experimental progress, − in this paper, we realize its 2DEG version, motivated by the Majorana proposals for topological planar JJs. , Selective area growth (SAG) of PbTe film has been previously achieved on InP, a substrate that is lattice-mismatched with PbTe . In this work, the SAG PbTe film is grown on a lattice-matched substrate to minimize the disorder.…”