“…Among the important optoelectronic devices, UV detection plays an essential role in biological analysis, space exploration, environmental sensors, and UV irradiation detections. − In the past few decades, UV photodetectors with wide-band-gap semiconductors have been studied extensively owing to their suitable direct band gap and low cost, such as (Al) GaN, AlN, ZnO, − TiO 2 , − WO 3 , etc. However, Group III nitrides are usually synthesized via relatively expensive approaches such as vapor–liquid–solid or epitaxy, which accounts for their high cost and hence hampers their commercial application. , On the other hand, those photodetectors based on metal oxide suffer from persistent photoconductivity (PPC) caused by the surface and bulk deep-level defects, , resulting in long response tails.…”