Single-Crystal Silicon on a Sapphire Substrate

Manasevit, H. M.; Simpson, W. I.

doi:10.1063/1.1713618

Cited by 163 publications

(34 citation statements)

References 2 publications

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“…The analysis reveals unique features of ALON, such as stabilization of the optimal resonance frequency as the height of the lid increases. This behavior deserves further experimental studies employing other stiff materials, such as sapphire [44], for which some perspectives on the bonding process are known [45]. The rule equation (29) based on the comparative analysis of the mechanical and electrical characteristics of the device is easy to implement in the applications, and it can successfully predict the frequency ranges in which system resonances occur.…”

Section: Discussionmentioning

confidence: 99%

Performance Study of Acoustophoretic Microfluidic Silicon-Glass Devices by Characterization of Material- and Geometry-Dependent Frequency Spectra

2017

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The mechanical and electrical response of acoustophoretic microfluidic devices attached to an ac-voltage-driven piezoelectric transducer is studied by means of numerical simulations. The governing equations are formulated in a variational framework that, introducing Lagrangian and Hamiltonian densities, is used to derive the weak form for the finite-element discretization of the equations and to characterize the device response in terms of frequency-dependent figures of merit or indicators. The effectiveness of the device in focusing microparticles is quantified by two mechanical indicators: the average direction of the pressure gradient and the amount of acoustic energy localized in the microchannel. Furthermore, we derive the relations between the Lagrangian, the Hamiltonian, and three electrical indicators: the resonance Q value, the impedance, and the electric power. The frequency response of the hard-to-measure mechanical indicators is correlated to that of the easy-to-measure electrical indicators, and, by introducing optimality criteria, it is clarified to which extent the latter suffices to identify optimal driving frequencies as the geometric configuration and the material parameters vary. The latter have been varied by considering both Pyrex and aluminium nitroxide top-lid materials.

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Section: Discussionmentioning

confidence: 99%

Performance Study of Acoustophoretic Microfluidic Silicon-Glass Devices by Characterization of Material- and Geometry-Dependent Frequency Spectra

2017

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“…This has also been observed for gold in silicon by Collins et al (1). Therefore in device processing, where each diffusion step is at a lower temperature than the preceding one, gold present to the limit of solid solubility during an earlier step would be expected to form precipitates in the bulk or to be rejected to the surface due to the high diffusion coefficient.…”

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confidence: 92%

“…During the development of the silicon-on-insulator technology, sapphire has been the most commonly employed substrate material (1)(2)(3). Excellent progress has been made, and semiconducting properties useful for application in commercial devices have been realized (4)(5)(6).…”

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confidence: 99%

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A Comparison of the Semiconducting Properties of Thin Films of Silicon on Sapphire and Spinel

Cullen

Corboy

1974

J. Electrochem. Soc.

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The Hall mobilities in 0.5 and 1.0 ~m thick heteroepitaxial silicon on (I[02) sapphire and (100) and (111) spinel substrates are compared. The substrates employed were Czochralski sapphire, alumina rich flame fusion spinel, stoichiometric Czochralski spinel, and a "modified" alumina-rich Czochralski spinel. The semiconducting properties of the silicon on the spinels are similar if the Czochralski grown substrate surfaces are air annealed prior to deposition. The reproducibility achieved in electrical properties in silicon on spinel is related to the method of preparation of the substrate. In comparing the semiconducting properties in silicon on sapphire with silicon on spinel, one finds that the MOS transistor mobilities are more similar than the Hall l-nobilities.

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“…This is a problem in GeOI technology where the handle wafer will be high resistivity silicon and MOS field effects reduce the effective resistivity and compromise rf performance. Sapphire is an ideal platform for rf integrated circuits and is currently used in silicon on sapphire (SOS) for specialised rf applications [1,2]. In addition, the sapphire has a coefficient of thermal expansion, which is well matched to that of germanium.…”

Section: Introductionmentioning

confidence: 99%

Germanium on sapphire substrates for system on a chip

Gamble¹,

Armstrong²,

Baine³

et al. 2008

Materials Science in Semiconductor Processing

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a b s t r a c tGermanium on sapphire (GeOS) is proposed for system on a chip applications. Sapphire substrates are demonstrated to exhibit lower rf losses and superior crosstalk suppression compared with oxidised silicon handle wafers. Inductors on sapphire also show higher quality factor and better frequency response than those manufactured on an SOI platform. GeOS substrates have been manufactured by wafer bonding. Bond strengths of greater than 2900 mJ m À2 have been obtained. Thin GeOS has been achieved by He/H 2 ion cut processes. A self-aligned W gate process on Ge has been established with processing temperature limited to 400 1C. P channel MOSTs exhibit low threshold voltage and a carrier mobility of about 400 cm 2 V À1 s À1.

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Single-Crystal Silicon on a Sapphire Substrate

Cited by 163 publications

References 2 publications

Performance Study of Acoustophoretic Microfluidic Silicon-Glass Devices by Characterization of Material- and Geometry-Dependent Frequency Spectra

Performance Study of Acoustophoretic Microfluidic Silicon-Glass Devices by Characterization of Material- and Geometry-Dependent Frequency Spectra

A Comparison of the Semiconducting Properties of Thin Films of Silicon on Sapphire and Spinel

Germanium on sapphire substrates for system on a chip

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