Single crystal preparation and properties of the AgGaGeS4–AgGaGe3Se8 solid solution

Shevchuk, M. V.; Atuchin, Victor V.; Kityk, A. V.; Fedorchuk, A.O.; Romanyuk, Y.E.; Całus, S.; Yurchenko, O.M.; Parasyuk, O.V.

doi:10.1016/j.jcrysgro.2010.10.038

Cited by 35 publications

(10 citation statements)

References 29 publications

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“…It has been shown that Ge doping in the AgGaQ 2 compounds can decrease the growth temperature significantly. 15,16 In view of all of the above discussion, the Li/Ga/Ge/Q (Q = S, Se, Te) systems are attractive, as shown by the discovery of the Li 2 Ga 2 GeS 6 compound in 2008. 8 However, the NLO coefficient and birefringence of Li 2 Ga 2 GeS 6 are still a bit small for application in the IR range according to our calculation.…”

Section: ■ Introductionmentioning

confidence: 99%

LiGaGe₂Se₆: A New IR Nonlinear Optical Material with Low Melting Point

et al. 2011

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The new compound LiGaGe(2)Se(6) has been synthesized. It crystallizes in the orthorhombic space group Fdd2 with a = 12.501(3) Å, b = 23.683(5) Å, c = 7.1196(14) Å, and Z = 8. The structure is a three-dimensional framework composed of corner-sharing LiSe(4), GaSe(4), and GeSe(4) tetrahedra. The compound exhibits a powder second harmonic generation signal at 2 μm that is about half that of the benchmark material AgGaSe(2) and possesses a wide band gap of about 2.64(2) eV. LiGaGe(2)Se(6) melts congruently at a rather low temperature of 710 °C, which indicates that bulk crystals can be obtained by the Bridgman-Stockbarger technique. According to a first-principles calculation, there is strong hybridization of the 4s and 4p orbitals of Ga, Ge, and Se around the Fermi level. The calculated birefractive index is Δn = 0.04 for λ ≥ 1 μm, and the calculated major SHG tensor elements are d(15) = 18.6 pm/V and d(33) = 12.8 pm/V. This new material is promising for application in IR nonlinear optics.

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Section: ■ Introductionmentioning

confidence: 99%

LiGaGe₂Se₆: A New IR Nonlinear Optical Material with Low Melting Point

et al. 2011

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“…However, to have a wide solid solution range without drastic defect generation and optical quality degradation, it is desirable for the end parent crystals to be isostructural [11][12][13][14][15]. As to KABO, a search for structural analogs was implemented in the past because the isovalent element substitution seems to be possible in * Corresponding author.…”

Section: Introductionmentioning

confidence: 99%

Preparation and structural properties of nonlinear optical borates K2(1−x)Rb2xAl2B2O7, 0<x<0.75

Atuchin

Базаров

Gavrilova

et al. 2012

Journal of Alloys and Compounds

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“…The crystal growth technique used in this work was the vertical Bridgman– Stockbarger method as described in our previous papers and other works [22], [24], [29], [31], [32], [33]. Elementary copper (Cu), gallium (Ga) and selenium (Se) were used as starting materials.…”

Section: Methodsmentioning

confidence: 99%

Growth and anisotropy of transport properties of CuGaSe2 single crystals

Mobarak

Ashari

Nassary

et al. 2018

Heliyon

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Single crystals of CuGaSe2 are prepared by a technique based on the vertical Bridgman procedure. The crystal chemical and phase compositions were identified by using dispersive X-ray fluorescence spectrometry and X-ray diffraction data analysis, respectively. The Hall effect and the electrical conductivity were determined in terms of temperature, parallel and orthogonal to the layer surface, and the parameters proved to be strongly anisotropic. From carried out measurements, different parameters such like the carrier mobilities, the carrier concentration, the relaxation time, the diffusion coefficient, and the length of diffusion for both, majority carriers and minority carriers were estimated.

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Single crystal preparation and properties of the AgGaGeS4–AgGaGe3Se8 solid solution

Cited by 35 publications

References 29 publications

LiGaGe₂Se₆: A New IR Nonlinear Optical Material with Low Melting Point

LiGaGe₂Se₆: A New IR Nonlinear Optical Material with Low Melting Point

Preparation and structural properties of nonlinear optical borates K2(1−x)Rb2xAl2B2O7, 0<x<0.75

Growth and anisotropy of transport properties of CuGaSe2 single crystals

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Single crystal preparation and properties of the AgGaGeS4–AgGaGe3Se8 solid solution

Cited by 35 publications

References 29 publications

LiGaGe2Se6: A New IR Nonlinear Optical Material with Low Melting Point

LiGaGe2Se6: A New IR Nonlinear Optical Material with Low Melting Point

Preparation and structural properties of nonlinear optical borates K2(1−x)Rb2xAl2B2O7, 0<x<0.75

Growth and anisotropy of transport properties of CuGaSe2 single crystals

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LiGaGe₂Se₆: A New IR Nonlinear Optical Material with Low Melting Point

LiGaGe₂Se₆: A New IR Nonlinear Optical Material with Low Melting Point