Single‐Crystal Organic Nanowires of Copper–Tetracyanoquinodimethane: Synthesis, Patterning, Characterization, and Device Applications

Xiao, Kai; Tao, Jing; Pan, Zhengwei; Puretzky, Alexander A.; Ivanov, Ilia N.; Pennycook, Stephen J.; Geohegan, David B.

doi:10.1002/anie.200604397

Cited by 91 publications

(77 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…To date, however, very few solutionprocessable, air-stable organic n-channel semiconductors matching the performance of amorphous silicon (a-Si) ( Ն 0.1 cm 2 /Vs) have been reported (4)(5)(6)(7)(8). Organic semiconductor nano/microwires (NWs/MWs) have recently emerged as promising building blocks for various electronic and optical applications such as light-emitting diodes (LEDs) (9), field-effect transistors (FETs) (10), photoswitches (11), vapor sensors (12), solar cells (13), nanoscale lasers (14), optical waveguides (15), and memory devices (16). These unique materials combine the high-performance of singlecrystalline structures with solution-processability by dispersion (17,18).…”

mentioning

confidence: 99%

Solution-processed, high-performance n-channel organic microwire transistors

Oh¹,

Lee²,

Mannsfeld³

et al. 2009

Proc. Natl. Acad. Sci. U.S.A.

222

197

View full text Add to dashboard Cite

The development of solution-processable, high-performance nchannel organic semiconductors is crucial to realizing low-cost, all-organic complementary circuits. Single-crystalline organic semiconductor nano/microwires (NWs/MWs) have great potential as active materials in solution-formed high-performance transistors. However, the technology to integrate these elements into functional networks with controlled alignment and density lags far behind their inorganic counterparts. Here, we report a solutionprocessing approach to achieve high-performance air-stable nchannel organic transistors (the field-effect mobility ( ) up to 0.24 cm 2 /Vs for MW networks) comprising high mobility, solutionsynthesized single-crystalline organic semiconducting MWs ( as high as 1.4 cm 2 /Vs for individual MWs) and a filtration-and-transfer (FAT) alignment method. The FAT method enables facile control over both alignment and density of MWs. Our approach presents a route toward solution-processed, high-performance organic transistors and could be used for directed assembly of various functional organic and inorganic NWs/MWs. organic semiconductors ͉ single crystals ͉ solution processing ͉ alignment S olution-processable, high-performance n-channel (electrontransporting) organic semiconductors are indispensable for cost-effective production of all-organic, flexible complementary logic elements (1-3). To date, however, very few solutionprocessable, air-stable organic n-channel semiconductors matching the performance of amorphous silicon (a-Si) ( Ն 0.1 cm 2 /Vs) have been reported (4-8). Organic semiconductor nano/microwires (NWs/MWs) have recently emerged as promising building blocks for various electronic and optical applications such as light-emitting diodes (LEDs) (9), field-effect transistors (FETs) (10), photoswitches (11), vapor sensors (12), solar cells (13), nanoscale lasers (14), optical waveguides (15), and memory devices (16). These unique materials combine the high-performance of singlecrystalline structures with solution-processability by dispersion (17,18). Several p-channel (hole-transporting) organic wires prepared by solution-processing have exhibited Ͼ 0.1 cm 2 /Vs for singlewire transistors (19)(20)(21)(22), whereas only a few solution-synthesized n-channel organic wires have been reported, typically with low performance ( Ϸ10 Ϫ3 Ϫ 10 Ϫ2 cm 2 /Vs) (23,24).Despite the intrinsic high mobility of single-crystalline wires, precise wire placement and wire-to-wire performance variation, due to the difference in the contact quality at the wire/insulator and wire/electrode interfaces, substantially hinder successful device integration (10, 25). Therefore, the technology to achieve network films of organic MWs deposited from a dispersion with controlled alignment and density is acutely desired. The integration of inorganic and metallic wires into functional network films has been extensively explored by using a number of methods such as the flow cell method (26), electric field (27, 28), magnetic field (29), electrospinning (30),...

show abstract

mentioning

confidence: 99%

Solution-processed, high-performance n-channel organic microwire transistors

Oh¹,

Lee²,

Mannsfeld³

et al. 2009

Proc. Natl. Acad. Sci. U.S.A.

222

197

View full text Add to dashboard Cite

show abstract

“…Patterned deposition techniques based on other mechanisms were also developed, for example, CuTCNQ nanoribbons were grown via the selective reaction between TCNQ vapor and the patterned Cu surfaces [125,361,362] by exposing to TCNQ vapor for device fabrication. CuTCNQ nanoribbons were found to grow from two neighboring electrodes to stretch toward each other and finally bridge the interelectrode gap [125].…”

Section: Patterned Deposition Os Crystalsmentioning

confidence: 99%

“…Although SAMs of functionalized thiols supported on metal films were successful in promoting nucleation and growth of inorganic crystals with finely tuned crystal sizes, crystallographic orientation, and crystal micropatterning [362,[597][598][599], their uses in organic crystallization were rather limited due to prevailing van der Waals interactions against the ionic ones that were critical at the organic-inorganic interfaces. It was found that patterned SAM templates could produce site-specific crystallization of organic charge transferring salts [600] and pentacene films [356,357].…”

Section: Sam-modified Os Devicesmentioning

confidence: 99%

Organic semiconductors for device applications: current trends and future prospects

Ahmad

2014

Journal of Polymer Engineering

View full text Add to dashboard Cite

Abstract:With the rich experience of developing silicon devices over a period of the last six decades, it is easy to assess the suitability of a new material for device applications by examining charge carrier injection, transport, and extraction across a practically realizable architecture; surface passivation; and packaging and reliability issues besides the feasibility of preparing mechanically robust wafer/substrate of single-crystal or polycrystalline/ amorphous thin films. For material preparation, parameters such as purification of constituent materials, crystal growth, and thin-film deposition with minimum defects/ disorders are equally important. Further, it is relevant to know whether conventional semiconductor processes, already known, would be useable directly or would require completely new technologies. Having found a likely candidate after such a screening, it would be necessary to identify a specific area of application against an existing list of materials available with special reference to cost reduction considerations in large-scale production. Various families of organic semiconductors are reviewed here, especially with the objective of using them in niche areas of large-area electronic displays, flexible organic electronics, and organic photovoltaic solar cells. While doing so, it appears feasible to improve mobility and stability by adjusting π-conjugation and modifying the energy bandgap. Higher conductivity nanocomposites, formed by blending with chemically conjugated C-allotropes and metal nanoparticles, open exciting methods of designing flexible contact/interconnects for organic and flexible electronics as can be seen from the discussion included here.

show abstract

“…In particular, the discovery of electrically and optically bistable behaviour and memory effects of both AgTCNQ and CuTCNQ has sparked considerable interest in AgTCNQ and CuTCNQ nonvolatile-based memory devices. [5][6][7][8][9][10] Complementary metal oxide semiconductor devices fabricated from these TCNQ materials have been downscaled in size to an area of 0.25 mm. [9] A range of techniques have therefore been introduced, including vacuum vapour deposition of TCNQ onto metal surfaces at low temperature [11] and thermal vapour deposition of TCNQ on Ag at 150-1808C.…”

Section: Introductionmentioning

confidence: 99%

Decorating Semiconductor Silver-Tetracyanoquinodimethane Nanowires with Silver Nanoparticles from Ionic Liquids

et al. 2014

View full text Add to dashboard Cite

Hybrid semiconducting silver-tetracyanoquinodimethane (AgTCNQ) nanowires decorated with Ag nanoparticles have been synthesized at room temperature in the ionic liquid 1-butyl-3-methylimidazolium tetrafluoroborate. Hydroquinone was applied to reduce Ag þ and TCNQ to silver nanoparticles, and TCNQ À , respectively, under ambient conditions. AgTCNQ nanowires were formed via spontaneous electrolysis between Ag metal nanoparticles and TCNQ, and reaction between Ag þ and TCNQ À . Microscopic, spectroscopic, and X-ray characterizations all confirmed the formation of crystalline Ag nanoparticle-AgTCNQ nanowire hybrid structures. The ionic liquid was used as a reaction medium, but also as a stabilizing (or blocking) agent to control the nucleation and growth rate of AgTCNQ wires.

show abstract

Single‐Crystal Organic Nanowires of Copper–Tetracyanoquinodimethane: Synthesis, Patterning, Characterization, and Device Applications

Cited by 91 publications

References 24 publications

Solution-processed, high-performance n-channel organic microwire transistors

Solution-processed, high-performance n-channel organic microwire transistors

Organic semiconductors for device applications: current trends and future prospects

Decorating Semiconductor Silver-Tetracyanoquinodimethane Nanowires with Silver Nanoparticles from Ionic Liquids

Contact Info

Product

Resources

About