Single-Crystal Nanorings Formed by Epitaxial Self-Coiling of Polar Nanobelts

Kong, Xiangyang; Ding, Y.; Yang, Rusen; Wang, Zhong Lin

doi:10.1126/science.1092356

Cited by 1,409 publications

(880 citation statements)

References 9 publications

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“…In a typical synthesis of Mn-doped GaN nanocrystals, 0.501 g of GaCl 3 , 0.061 g of NaN 3 and stoichiometric amount of anhydrous MnCl 2 (according to Mn/Ga atomic ratios of 0, 0.02, 0.04, 0.06 and 0.08) were mixed and introduced into a 2 ml stainless steel Swagelok reactor at room temperature. It is placed inside the glove box under N 2 atmosphere.…”

Section: Methodsmentioning

confidence: 99%

One-pot simple synthesis and characterisation of Mn²⁺-doped GaN nanorods by RAPET method

Mahendiran

Maiyalagan

Kannan

2014

Journal of Experimental Nanoscience

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In this work, we display one-step reactions under autogenic pressure at elevated temperature (RAPET) method-based synthesis of Mn-doped GaN nanorods by varying the atomic ratio of Mn:Ga as 0, 0.02, 0.04, 0.06 and 0.08, respectively. The synthesised nanorods are characterised by X-ray diffraction, high-resolution transmission electron microscopy (HRTEM) and Raman spectral methods. It is observed that there is a decrease in the lattice constant with an increase in the concentration of Mn (from 0.02 to 0.08 wt%). Moreover, the smaller covalent radius of Mn is the key for the doping process. The Mn-doped GaN nanocrystals show rod-like morphology with a length of 40À50 nm and width of 8À12 nm. This size factor mainly depends on the doping of Mn [from transmission electron microscopy (TEM) analysis] into GaN components. Well-defined lattice fringes are elucidated for the growth of crystalline hexagonal GaN (wurtzite type) nanocrystals.

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Section: Methodsmentioning

confidence: 99%

One-pot simple synthesis and characterisation of Mn²⁺-doped GaN nanorods by RAPET method

Mahendiran

Maiyalagan

Kannan

2014

Journal of Experimental Nanoscience

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“…In addition, the emergence of stacking faults will further reduce the energy barrier, thus lead to the fastest growth along the direction parallel to the stacking faults. 37 Meanwhile, extended dislocations in (1 j 11) planes simultaneously form and further glide in their own slip planes. Once two stacking faults meet at the line of intersection of two adjacent {111} planes, Lomer-Cottrell partial dislocation will form along one of the six 〈011〉 directions, with b of (1/6)〈011〉 and thus act as a strong barrier to the glide of further dislocations on the {111} planes.…”

Section: Formation Of Nanospirals With In-plane Bending Mediated By Lmentioning

confidence: 99%

Growth of ZnSe Nanospirals with Bending Mediated by Lomer−Cottrell Sessile Dislocations through Varying Pressure

Jin

Wang

Choy

2008

Crystal Growth & Design

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ZnSe nanospirals, with zinc blende structured building blocks exhibiting unconventional mosaic configuration, were successfully fabricated via a two-stage growth process, in which abrupt variation of reaction pressure was introduced. In-plane bending, with remarkable morphological difference from the commonly reported nanorings or nanohelixes induced by spontaneous polarization in II-VI semiconductors, has been observed, which can be mainly attributed to existence of numerous Lomer-Cottrell sessile dislocations with edge components. Investigations on morphological evolutions by applying different reaction pressure and growth time in the second stage imply that the formation of nanospirals is closely related to the pressure variation. The results may provide useful information for further understanding the strain release mechanism and mechanical response of ZnSe at the nanoscale.

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“…To date, a large number of helical or spring semiconductor materials have been produced via perturbations in the growth kinetics. 9,10 Zinc sulfide (ZnS) micro/nanoscale structures have attracted considerable attention due to the size-dependent tuning of their functional properties and thus have applications in diverse photonics fields such as light-emitting diodes, lasers and ultraviolet (UV) light sensors. 11,12 Considering the benefits of helical structures, it would thus be of particular interest to synthesize ZnS materials with helical structure and investigate their novel properties for optoelectronic systems.…”

Section: Introductionmentioning

confidence: 99%

Polar-surface-driven growth of ZnS microsprings with novel optoelectronic properties

Zhang

Cong

et al. 2015

NPG Asia Mater

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Small perturbations during the growth kinetics of low-dimensional semiconductor structures may lead to novel features, which may provide an ideal system for understanding the fundamental physics of optical phenomena in optoelectronics devices. In this study, we report deformation-free single-crystal zinc sulfide (ZnS) microsprings produced by a polar-surface-driven growth process, and we thoroughly investigate the electrical characteristics of individual ZnS microsprings under electron beam irradiation and their initial applications in ultraviolet (UV) light sensors and waveguides. The microsprings produced are formed by a block-by-block stacking process following a hexagonal screw model that does not introduce distortion into the crystal lattices. The first photodetectors designed based on a single ZnS microspring exhibit a high spectral selectivity combined with a high photosensitivity and a fast response time (o0.3 s) under 320-nm illumination, which make ZnS microsprings particularly valuable as UV-light sensors. Concurrently, excellent waveguide performance along the fiber of a single ZnS microspring (for example,~0.13 dB μm − 1 at 450 nm, and~0.17 dB μm − 1 at 520 nm) is demonstrated for the first time. The high crystal quality, the fast response to UV light and the low propagation loss exhibited by ZnS microsprings indicate that they have important potential applications in nano-optoelectronic systems. NPG Asia Materials (2015) 7, e213; doi:10.1038/am.2015.100; published online 4 September 2015 INTRODUCTIONOne-dimensional semiconductor structures provide new opportunities to exploit the chemical and physical properties of materials at the micro-and nano-scales, making them promising candidates for future optoelectronic devices that take advantage of the well-controlled size, morphology and geometries of these materials. 1,2 The most recent studies have shown that bent nanowires or nanobelts can exhibit novel optical and electrical properties compared with their unbent counterparts, thus appreciably widening their potential applications in optoelectronic systems because optoelectronic characteristics in lowdimensional materials are particularly sensitive to crystallinity and electronic structures. 3 For example, in the photoluminescence spectra of bending wurtzite micro/nanowires, a red shift of the near-band energy induced by deformation has been shown to have a linear relation between the peak shift and the strain gradient. 4 Because the peaks of the photoluminescence spectra are near the band gap of these materials, such a linear correlation between the band gap and strain gradient could provide an alternative method in optoelectronics, such as enhanced photodetectors. 5 Conversely, from both scientific and practical viewpoints, one-dimensional structures are ideal materials to measure the optical gains of miniaturized lasers and light amplification due to their strong ability to confine electrons, holes and photons.

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Single-Crystal Nanorings Formed by Epitaxial Self-Coiling of Polar Nanobelts

Cited by 1,409 publications

References 9 publications

One-pot simple synthesis and characterisation of Mn²⁺-doped GaN nanorods by RAPET method

One-pot simple synthesis and characterisation of Mn²⁺-doped GaN nanorods by RAPET method

Growth of ZnSe Nanospirals with Bending Mediated by Lomer−Cottrell Sessile Dislocations through Varying Pressure

Polar-surface-driven growth of ZnS microsprings with novel optoelectronic properties

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Single-Crystal Nanorings Formed by Epitaxial Self-Coiling of Polar Nanobelts

Cited by 1,409 publications

References 9 publications

One-pot simple synthesis and characterisation of Mn2+-doped GaN nanorods by RAPET method

One-pot simple synthesis and characterisation of Mn2+-doped GaN nanorods by RAPET method

Growth of ZnSe Nanospirals with Bending Mediated by Lomer−Cottrell Sessile Dislocations through Varying Pressure

Polar-surface-driven growth of ZnS microsprings with novel optoelectronic properties

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One-pot simple synthesis and characterisation of Mn²⁺-doped GaN nanorods by RAPET method

One-pot simple synthesis and characterisation of Mn²⁺-doped GaN nanorods by RAPET method