Single-crystal N-polar GaN <i>p</i>-<i>n</i> diodes by plasma-assisted molecular beam epitaxy

Cho, Yong-Jin; Hu, Zongyang; Nomoto, Kazuki; Xing, Huili Grace; Jena, Debdeep

doi:10.1063/1.4989581

Cited by 16 publications

(24 citation statements)

References 27 publications

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“…However, in the opposite direction of the Ga-polar counterparts, the homoepitaxial layers along the N-polar direction demonstrate unique device properties because of the higher decomposition temperature and polarity-dependent property [45,46]. With the N-polar single-crystal FS-GaN substrate, an electric field of 2.2 MV/cm without any edge terminations was achieved, as well as a BV of 2.4 kV with N 2 O surface plasma treatment and field plate (FP) [46,47]. As another special GaN substrate, the m-plane also attracts wide attention given its nonpolar property for which the Ga:N was 1:1 in the m-plane with respect to only Ga in the c-polar and only N in the N-polar substrates.…”

Section: Gan Substrate Of Vertical Pndsmentioning

confidence: 99%

Review of Recent Progress on Vertical GaN-Based PN Diodes

Younis

Chiu

et al. 2021

Nanoscale Res Lett

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As a representative wide bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric field). Vertical GaN devices have been investigated, are regarded as one of the most promising candidates for power electronics application, and are characterized by the capacity for high voltage, high current, and high breakdown voltage. Among those devices, vertical GaN-based PN junction diode (PND) has been considerably investigated and shows great performance progress on the basis of high epitaxy quality and device structure design. However, its device epitaxy quality requires further improvement. In terms of device electric performance, the electrical field crowding effect at the device edge is an urgent issue, which results in premature breakdown and limits the releasing superiorities of the GaN material, but is currently alleviated by edge termination. This review emphasizes the advances in material epitaxial growth and edge terminal techniques, followed by the exploration of the current GaN developments and potential advantages over silicon carbon (SiC) for materials and devices, the differences between GaN Schottky barrier diodes (SBDs) and PNDs as regards mechanisms and features, and the advantages of vertical devices over their lateral counterparts. Then, the review provides an outlook and reveals the design trend of vertical GaN PND utilized for a power system, including with an inchoate vertical GaN PND.

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Section: Gan Substrate Of Vertical Pndsmentioning

confidence: 99%

Review of Recent Progress on Vertical GaN-Based PN Diodes

Younis

Chiu

et al. 2021

Nanoscale Res Lett

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“…Cho et al 9 realized nitrogen polar gallium nitrides p-n diodes on single crystal nitrogen polar gallium nitride wafers through plasma-assisted molecular beam epitaxy. The current-voltage characteristic shows high quality recti¯cation and electroluminescence characteristics, with high on currents $ 10 kA/cm 2 , low o® currents < 10 À5 A/ cm 2 , on/o® current ratio of > 10 9 , and interband photon emission.…”

Section: Molecular Diodesmentioning

confidence: 99%

Single Molecule-Based Electronic Devices: A Review

Chen

2019

NANO

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In the face of the fact that the development of traditional silicon-based electronic devices is increasingly limited, single molecule electronic device, which has been attracting more and more attention, is considered as one of the most hopeful candidates to realize the miniaturization of conventional electronic devices. In this paper, an overview of single molecule electronic devices is provided, including molecular electronic devices and electrode types. First, several molecular electronic devices are presented, including molecular diodes, molecular memories, molecular wires, molecular field effect transistors (FET) and molecular switches. Then the influence of different electrode types of the transport characteristics is introduced, showing that graphene is a promising electrode material for single molecule electronic devices. Moreover, other excellent characteristics of molecular devices are briefly introduced, such as potential thermoelectric effects, new thermally induced spin transport phenomena and negative differential resistance (NDR) behavior. Finally, the future challenges to the development of electronic devices based on single molecules are described.

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“…[16][17][18] Owing to their high breakdown electric field, high longitudinal optical phonon energy, and high thermal conductivity, nitride semiconductors represent a promising platform for the development of high-speed and high-power electronic and photonic devices. 19,20 In spite of their outstanding material properties, III-nitride semiconductors exhibit strong internal polarization fields which makes the engineering of quantum confined states, a nontrivial task.…”

mentioning

confidence: 99%

N-polar GaN/AlN resonant tunneling diodes

Cho,

Encomendero,

et al. 2020

Preprint

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N-polar GaN/AlN resonant tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-voltage characteristics reveal a negative differential conductance (NDC) region with a peak tunneling current of 6.8 ± 0.8 kA/cm 2 at a forward bias of ∼8 V. Under reverse bias, the polarizationinduced threshold voltage is measured at ∼ −4 V. These resonant and threshold voltages are well explained with the polarization field which is opposite to that of the metal-polar counterpart, confirming the N-polarity of the RTDs. When the device is biased in the NDC-region, electronic oscillations are generated in the external circuit, attesting to the robustness of the resonant tunneling phenomenon. In contrast to metal-polar RTDs, N-polar structures have the emitter on the top of the resonant tunneling cavity. As a consequence, this device architecture opens up the possibility of seamlessly interfacing-via resonant tunneling injection-a wide range of exotic materials with III-nitride semiconductors, providing a route to explore new device physics.

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Single-crystal N-polar GaN p-n diodes by plasma-assisted molecular beam epitaxy

Cited by 16 publications

References 27 publications

Review of Recent Progress on Vertical GaN-Based PN Diodes

Review of Recent Progress on Vertical GaN-Based PN Diodes

Single Molecule-Based Electronic Devices: A Review

N-polar GaN/AlN resonant tunneling diodes

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