Single crystal growth and characterization of zinc phosphide

Multiple morphologies and functionality of nanowires made from earth-abundant zinc phosphide

“…This sets MBE grown zinc phosphide apart from other growth techniques, which predominantly result in P-rich products. 15,32 STEM EDX data of straight-tilted nanowires grown at 235 1C showed a similar trend.…”

“…The use of MBE lowers growth temperatures in comparison to other techniques used to obtain Zn 3 P 2 , such as chemical vapour transport in a quartz ampule and metal-organic chemical vapour deposition. 11,[30][31][32] The lower growth temperature should significantly reduce the number of grown-in defects induced by strain from differential thermal expansion. Furthermore, by varying the V/II flux ratio in the MBE, the composition of thin films can be adjusted precisely.…”

Mg doping and alloying in Zn<inf>3</inf>P<inf>2</inf> heterojunction solar cells

“…Using procedures described previously [9][10][11][12][13][14] the powders were then grown into polycrystalline boules 1 cm in diameter and 4 cm in length, with grain sizes of -1-5 mm 2 . The resulting crystals were diced with a diamond saw and had as-grown resistivity between 100-2000 n cm.…”

Photoluminescence-based measurements of the energy gap and diffusion length of Zn3P2

“…Red phosphorus chips and zinc shot ͑99.9999%, Alfa Aesar͒ were combined at 850°C to form Zn 3 P 2 powders. Using procedures described previously, [18][19][20][21][22][23] the powders were then grown into polycrystalline boules that were 1 cm in diameter and 4 cm in length, with grain sizes of ϳ1-5 mm 2 and hole concentrations of 10 15 cm −3 . The resulting crystals were diced with a diamond saw and were polished with diamond paste to produce Zn 3 P 2 wafers with a 1-2 nm root-mean-squared surface roughness, as measured by atomic force microscopy.…”