Single Crystal Charge Density Studies of Thermoelectric Material Indium Antimonide

Robert, M. Charles; Subha, B.; Ramachandran, K.

doi:10.5560/zna.2011-0004

Cited by 1 publication

(1 citation statement)

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“…Due to the diversity in the growth techniques, one should easily differentiate between the fabrications of horizontal NWs, that is, NWs lying in the substrate plane with the growth of vertical NWs, that is, NWs oriented perpendicular to the substrate. During the top-down fabrication method, InSb NWs are mostly fabricated by focused ion beam irradiation of InSb wafer [ 65 , 66 ] or by lithography and then etching steps, with the help of reactive ion etching after electron-beam lithography [ 67 ]. This phenomenon of lithography is simply described here because the detail of it is far from the contents of this article.…”

Section: Reviewmentioning

confidence: 99%

Indium Antimonide Nanowires: Synthesis and Properties

et al. 2016

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This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs) growth and their potential applications in the industry. In the first section, historical studies on the growth of InSb NWs have been presented, while in the second part, a comprehensive overview of the various synthesis techniques is demonstrated briefly. The major emphasis of current review is vapor phase deposition of NWs by manifold techniques. In addition, author review various protocols and methodologies employed to generate NWs from diverse material systems via self-organized fabrication procedures comprising chemical vapor deposition, annealing in reactive atmosphere, evaporation of InSb, molecular/ chemical beam epitaxy, solution-based techniques, and top-down fabrication method. The benefits and ill effects of the gold and self-catalyzed materials for the growth of NWs are explained at length. Afterward, in the next part, four thermodynamic characteristics of NW growth criterion concerning the expansion of NWs, growth velocity, Gibbs–Thomson effect, and growth model were expounded and discussed concisely. Recent progress in device fabrications is explained in the third part, in which the electrical and optical properties of InSb NWs were reviewed by considering the effects of conductivity which are diameter dependent and the applications of NWs in the fabrications of field-effect transistors, quantum devices, thermoelectrics, and detectors.

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Section: Reviewmentioning

confidence: 99%