Single-Crystal CdSe Nanosaws

Ma, Christopher; Ding, Y.; Moore, Daniel; Wang, Xudong; Wang, Zhong Lin

doi:10.1021/ja0395644

Cited by 221 publications

(177 citation statements)

References 20 publications

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“…In the recent years, nanocrystalline CdSe has been obtained by several methods, such as ion implantation, 12 chemical deposition, 13 sol-gel methods, 14 molecular-beam epitaxy, 15 metalorganic chemical vapor deposition, 16 or mechanical ball milling, 17 but there are only few reports on the synthesis of elongated or quasi-one-dimensional CdSe nanostructures. Ma et al 18 recently reported a single-crystal nanoribbon structure of wurtzite CdSe. In this work, rod-and needle-shaped micro-and nanostructures were grown during sintering treatments of CdSe powder.…”

Section: Growth and Luminescence Properties Of Micro-and Nanoneedles mentioning

confidence: 99%

Growth and luminescence properties of micro- and nanoneedles in sintered CdSe

Urbieta

Fernández

Piqueras

2004

Applied Physics Letters

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Sintering CdSe powder under argon flow at temperatures in the range 800–900 °C produces the formation of needles on the sample surface. Bundles of parallel needles of a diameter of about 50 nm give rise to a domain-like appearance in the sample. In addition, rods and needles with a wide range of dimensions up to several microns appear distributed in the surface. The influence of ball milling of the starting powder on the formation of the needles is investigated. Cathodoluminescence in the scanning electron microscope has been used to characterize the sintered samples.

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Section: Growth and Luminescence Properties Of Micro-and Nanoneedles mentioning

confidence: 99%

Growth and luminescence properties of micro- and nanoneedles in sintered CdSe

Urbieta

Fernández

Piqueras

2004

Applied Physics Letters

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“…CdSe nanowires based functional devices, such as transistors, photovoltaic cells [1], light-emitting diodes [2], lasers [3], etc., have been developed. Further modulation of the electronic structures and control of the transport dynamics of carriers in CdSe nanostructures are very important to optimize the optoelectronic properties.…”

Section: Introductionmentioning

confidence: 99%

Outermost tensile strain dominated exciton emission in bending CdSe nanowires

Liao

et al. 2014

Sci. China Mater.

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Artificial modulation of electronic structures and control of the transport dynamics of carriers and excitons in CdSe nanowire are important for its application in optoelectronic nanodevices. Here, we demonstrate the aggregative flow of excitons by bending CdSe nanowires. The bending strain induces spatial variance of bandgap, and the energy bandgap gradient will result in the flow of excitons towards the bending outer edge of CdSe nanowire. The exciton emission energy shows a uniform redshift in the bending region due to the aggregative flow of excitons, and the energy redshift increases linearly with increasing the strain at the outer edge of the CdSe nanowire. Our results show an effective method to drive, concentrate, and utilize the excitons in CdSe nanowires, which provides a guide for the design of high performance and flexible optoelectronic nanodevices.

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“…5 As a one-dimensional nanostructure, ZnS has been synthesized as nanowires, nanobelts, and nanocombs, but these nanostructures are randomly distributed on the surface of the substrate. 6,7 For applications in photonics, it is needed to create ZnS nanostructures that are highly aligned and ordered, but this type of structure has not been realized experimentally. In this paper, we report a novel approach for growing aligned and orientationordered ZnS nanowires.…”

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Crystal Orientation-Ordered ZnS Nanowire Bundles

2004

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Due to their potential applications, ranging from nanoscale electronic devices to tools for biomedical applications, onedimensional semiconductor nanostructures, such as nanowires and nanobelts, offer a high degree of interest for furthering the current state of nanotechnology research and development. Nanorods, 1 nanowires, 2 nanotubes, 3 and nanobelts 4 of various materials have been successfully synthesized, and they demonstrate novel luminescent, electronic, optical, and mechanical properties.ZnS is a direct wide band gap (3.91 eV) compound semiconductor that has a high index of refraction and a high transmittance in the visible range and is one of the most important materials in photonics research. 5 As a one-dimensional nanostructure, ZnS has been synthesized as nanowires, nanobelts, and nanocombs, but these nanostructures are randomly distributed on the surface of the substrate. 6,7 For applications in photonics, it is needed to create ZnS nanostructures that are highly aligned and ordered, but this type of structure has not been realized experimentally. In this paper, we report a novel approach for growing aligned and orientationordered ZnS nanowires. Our method relies on a buffer layer of CdSe grown on a Si(111) substrate, on which ZnS nanowires are grown. The growth process of the nanowire bundles is presented. The technique demonstrated could be an effective pathway for growing patterned, aligned, size-controlled, and orientation-ordered ZnS nanowires.The orientation-ordered ZnS nanowire bundles were synthesized through a two-step thermal evaporation process in a horizontal tube furnace. Commercially available CdSe powder (Alfa Aesar, 99.995% purity, metal basis) was placed in the center of a single-zone tube furnace (Thermolyne 79300). A vacuum was pulled into the tube for several hours to purge oxygen from the chamber. After evacuation to less than 2 × 10 -2 Torr, the temperature in the center of the tube was elevated to 750°C at a rate of 30°/min. A nitrogen (N 2 ) gas flow was introduced into the system at a rate of 50 sccm. The gas acted as a carrier for transporting the sublimated vapor to cooler regions within the tube furnace for deposition. The pressure was maintained at 300 mbar. The silicon substrates reached a temperature of about 575°C. After 1 h, the furnace was allowed to cool. Then, the source material of CdSe powder was replaced by commercially available ZnS powder (Alfa Aesar, 99.99% purity, metal basis). The temperature in the center of the tube was elevated to 1050°C. Again, a nitrogen gas flow was introduced at 50 sccm, and the pressure was maintained at 300 mbar. The silicon substrates reached a temperature of about 750°C. The system was held in this condition for a period of 60 min. Single-crystal silicon substrates were used for synthesizing the nanostructures. These substrates were placed downstream from the source material to collect the deposited nanostructures.The sample was analyzed on a scanning electron microscope (SEM). The deposited material has an extremely high yie...

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Single-Crystal CdSe Nanosaws

Cited by 221 publications

References 20 publications

Growth and luminescence properties of micro- and nanoneedles in sintered CdSe

Growth and luminescence properties of micro- and nanoneedles in sintered CdSe

Outermost tensile strain dominated exciton emission in bending CdSe nanowires

Crystal Orientation-Ordered ZnS Nanowire Bundles

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