Single-color peripheral photoinhibition lithography of nanophotonic structures

He, Minfei; Zhang, Zhimin; Cao, Chun; Qiu, Yiwei; Shen, Xiaoming; Zhou, Gang; Cai, Zixing; Sun, Xinjie; He, Xin; Xu, Liang; Liu, Xi; Ding, Chenliang; Kuang, Cuifang; Liu, Xu

doi:10.1186/s43074-022-00072-2

Cited by 21 publications

(13 citation statements)

References 29 publications

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“…We further note that using 660 nm for depletion instead of the more common 532 nm also causes less chromatic aberration with respect to the 780 nm excitation beam, which is advantageous specifically for 3D patterning deeper inside the photoresist. 15 ■ ASSOCIATED CONTENT * sı Supporting Information…”

Section: Discussionmentioning

confidence: 99%

“…19 Typical structure sizes achieved so far are in the range of 50 nm both in the lateral 10,20,21 and axial direction. 4 Lateral feature sizes below 40 nm were reported recently, 15,22,23 but no improvements in axial feature sizes were attempted in these studies.…”

Section: Introductionmentioning

confidence: 95%

“…Similar to STED microscopy, where stimulated emission depletes the excited state of a fluorophore within typically 10-100 ps so that fluorescence (typically on an ns timescale) cannot occur anymore, the starters of a polymerization reaction can be depleted via STED before they proceed toward forming radicals, usually via the passage through one or several transient states such as a triplet state (Figure ). This method, which we call STED lithography, was first realized by the Wegener group. , Alternatively, one can wait until the starter has actually transferred to a transient state T 1 − but prevent further reaction at this stage by transient absorption. An example would be a triplet–triplet absorption to a higher lying state T n from where it undergoes reverse intersystem crossing, followed by internal conversion to the ground state S 0 (Figure ).…”

Section: Introductionmentioning

confidence: 99%

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Low-Fluorescence Starter for Optical 3D Lithography of Sub-40 nm Structures

Gvindzhiliia

Sivun

Naderer

et al. 2023

ACS Appl. Opt. Mater.

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Stimulated emission depletion (STED) has been used to break the diffraction limit in fluorescence microscopy. Inspired by this success, similar methods were used to reduce the structure size in three-dimensional, subdiffractional optical lithography. So far, only a very limited number of radical polymerization starters proved to be suitable for STED-inspired lithography. In this contribution, we introduce the starter Michler’s ethyl ketone (MEK), which has not been used so far for STED-inspired lithography. In contrast to the commonly used 7-diethylamino-3-thenoylcoumarin (DETC), nanostructures written with MEK show low autofluorescence in the visible range. Therefore, MEK is promising for being used as a starter for protein or cell scaffolds in physiological research because the autofluorescence of DETC so far excluded the use of the green emission channel in multicolor fluorescence or confocal microscopy. In turn, because of the weak transitions of MEK in the visible spectrum, STED, in its original sense, cannot be applied to deplete MEK in the outer rim of the point spread function. However, a 660 nm laser can be used for depletion because this wavelength is well within the absorption spectrum of transient states, possibly of triplet states. We show that polymerization can be fully stopped by applying transient state absorption at 660 nm and that structure sizes down to approx. 40 nm in the lateral and axial directions can be achieved, which means 1/20 of the optical wavelength used for writing.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Low-Fluorescence Starter for Optical 3D Lithography of Sub-40 nm Structures

Gvindzhiliia

Sivun

Naderer

et al. 2023

ACS Appl. Opt. Mater.

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“…Compared with random or isolated nanostructures which may cause poor charge transfer, nanorod arrays (NRAs) with dense and vertical arrangement and connection can provide better charge transfer and separation, − thus improving the performance of devices. Furthermore, their high surface area contributes to increased sensitivity and detection efficiency.…”

Section: Introductionmentioning

confidence: 99%

Regulating Photocurrent Polarity Reversal Point in α-Ga₂O₃ Nanorod Arrays for Combinational Logic Circuit Applications

Xu,

Deng,

Cheng

et al. 2024

ACS Appl. Nano Mater.

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To enhance computing power, a broader understanding of semiconductors is imperative. Conventional semiconductor technology has reached its limits, necessitating the exploration and development of optoelectronic approaches. Among these, the photoelectrochemical (PEC) detector has emerged as a fresh photodetection paradigm. This study rigorously investigates the indispensability of advancing PEC semiconductor logic devices. By judiciously modifying the α-Ga2O3 sponge’s porous nanorod arrays (NRAs), photocurrent attributes are tailored via the dropwise addition of titanium carbide aqueous solution, conferring inherent self-powering characteristics to the device. Concurrently, leveraging two-dimensional titanium carbide as a modifier for gallium oxide empowers control over the polarity reversal point of the photocurrent in the photoelectrochemical photocurrent switching (PEPS) effect. This enhancement amplifies the exploitation of the PEPS effect in semiconductor devices, attributed to Ti3C2T x ’s dual response, both internal and external, under 254 nm deep ultraviolet illumination, thus intensifying carrier generation. Consequently, the interplay of charge transfer between Ti3C2T x and α-Ga2O3 expedites electron injection into the semiconductor, ultimately elevating α-Ga2O3’s surface Fermi level. Moreover, diverse degrees of Ti3C2T x modification afford distinct reactive sites and channels within α-Ga2O3, thereby elevating the reaction probabilities. Subsequent utilization of the PEPS effect yields PEC logic gates XOR and AND gates. Building upon this, a consolidated architecture integrates the combinational logic circuit elementshalf adder and four-input XOR gatestreamlining the circuit’s complexity and enhancing its utility in verification, computation, error detection, encoding, and decoding. Consequently, Ti3C2T x /α-Ga2O3 NRAs present a promising photoanode prospect. Notably, this marks the pioneering construction of logic components, such as a half adder and a four-input XOR gate, within a gallium oxide PEC device.

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“…[ 18 ] Those researchers have made tremendous progress in the two‐color (2CL) research direction, and depletion mechanisms and applications all have been extensively researched. [ 19–25 ]…”

Section: Introductionmentioning

confidence: 99%

Subdiffraction 3D Nanolithography by Two‐Photon Two‐Step Absorption and Photoinhibition

Ding,

Liu,

Liu

et al. 2023

Laser & Photonics Reviews

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Improving the 3D resolution is a decisive step in the transition of direct laser writing from being limited to research use to being a powerful tool. Three‐color (3CL) lithography is expected to result in significantly higher resolution with two‐color lasers initiating polymerization in two steps and one‐color laser inhibiting polymerization. However, the 3CL process increases the complexity of the system and makes the influence of chromatic aberration worse which leads to non‐ideal writing results, which is ≈80 nm linewidth (≈λ/10) at present. In this study, the 3CL lithography is improved by introducing almost one color (1CL) instead of three colors to achieve subdiffraction 3D nanolithography based on two‐photon two‐step absorption and photoinhibition (T2A‐PI). Using benzil as a photoinitiator, a sub‐30 nm (<λ/17.5) lateral feature size, minimum 80 nm lateral, and 160 nm axial pitches are achieved, which, to our knowledge, is the best to be fabricated using the laser in the visible region. 3D woodpile photonic crystals and other high‐quality nanostructures are fabricated, demonstrating the unique advantages over existing direct laser writing technologies.

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Single-color peripheral photoinhibition lithography of nanophotonic structures

Cited by 21 publications

References 29 publications

Low-Fluorescence Starter for Optical 3D Lithography of Sub-40 nm Structures

Low-Fluorescence Starter for Optical 3D Lithography of Sub-40 nm Structures

Regulating Photocurrent Polarity Reversal Point in α-Ga₂O₃ Nanorod Arrays for Combinational Logic Circuit Applications

Subdiffraction 3D Nanolithography by Two‐Photon Two‐Step Absorption and Photoinhibition

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Single-color peripheral photoinhibition lithography of nanophotonic structures

Cited by 21 publications

References 29 publications

Low-Fluorescence Starter for Optical 3D Lithography of Sub-40 nm Structures

Low-Fluorescence Starter for Optical 3D Lithography of Sub-40 nm Structures

Regulating Photocurrent Polarity Reversal Point in α-Ga2O3 Nanorod Arrays for Combinational Logic Circuit Applications

Subdiffraction 3D Nanolithography by Two‐Photon Two‐Step Absorption and Photoinhibition

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Regulating Photocurrent Polarity Reversal Point in α-Ga₂O₃ Nanorod Arrays for Combinational Logic Circuit Applications