Single-bit full adder and logic gate based on synthetic antiferromagnetic bilayer skyrmions

Mak, K. Y.; Xia, Jingbo; Zhang, Xichao; Li, Li; Fattouhi, Mouad; Ezawa, Motohiko; Liu, Xiaoxi; Zhou, Yan

doi:10.1007/s12598-022-01981-8

Cited by 7 publications

(5 citation statements)

References 54 publications

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“…[60] Here, we simulate the SAF skyrmion logic functions using the Object Oriented Micromagnetic Framework (OOMMF) with an extended module of the Dzyaloshinskii-Moriya interaction. [61] For micromagnetic simulations, the standard magnetic material parameters of Co/Pt multilayers are used for the SAF structure: [27,29,42,45,59]…”

Section: Model and Methodsmentioning

confidence: 99%

“…In particular, a logic switching delay is determined by the skyrmion velocity and the distance between the input and output terminals. [45,49] Therefore, the trade-off between skyrmion-based logic gates' response speed and energy consumption needs to be considered. [48] Namely, a smaller driving current can decrease the energy consumption and a large current can be adopted for high switching speed.…”

Section: Realization Of Not Logic Functionmentioning

confidence: 99%

“…[29] Therefore, interest has been devoted to SAF skyrmions that can effectively suppress the skyrmion Hall effect without affecting the topological protection. [31,[42][43][44][45] Up to now, there are many logic devices that have been designed based on skyrmions and domain wall (DW) dynamics in nanotrack, such as the reversible conversion and the collision between the skyrmion and the domain wall, [23,24,26,46,47] skyrmion-skyrmion collision, [27,40,[48][49][50] skyrmion Hall effect and skyrmion-edge repulsion. [40] Compared with the most investigated FM skyrmions and domain wall, the racetrack memory and logic devices based on SAF skyrmions exhibit five distinctive characteristics.…”

Section: Introductionmentioning

confidence: 99%

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Skyrmion-based logic gates controlled by electric currents in synthetic antiferromagnet

Li¹,

Luo²,

Xia³

et al. 2023

Chinese Phys. B

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Skyrmions in synthetic antiferromagnetic (SAF) systems have attracted much attention in recent years due to their superior stability, high-speed mobility and completely compensated skyrmion Hall effect. They are promising building blocks for the next generation of magnetic storage and computing devices with ultra-low energy and ultra-high density. Here, we theoretically investigate the motion of a skyrmion in a SAF bilayer racetrack and find the velocity of a skyrmion can be controlled jointly by the edge effect and the driving force induced by the spin current. Furthermore, we propose a logic gate that can realize different logic functions of logic AND, OR, NOT, NAND, NOR and XOR gates. Several effects including the spin-orbit torque, the skyrmion Hall effect, skyrmion-skyrmion repulsion and skyrmion-edge interaction are considered in this design. Our work may provide a way to utilize the SAF skyrmion as a versatile information carrier for future energy-efficient logic gates.

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Section: Model and Methodsmentioning

confidence: 99%

Section: Realization Of Not Logic Functionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Skyrmion-based logic gates controlled by electric currents in synthetic antiferromagnet

Li¹,

Luo²,

Xia³

et al. 2023

Chinese Phys. B

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“…30,31 SkHE was shown to be suppressed by employing synthetic anti-ferromagnets. 32 However, the skyrmion stability issue persists with current-driven devices.…”

Section: Introductionmentioning

confidence: 99%

Voltage-controlled magnetic anisotropy gradient-driven skyrmion-based half-adder and full-adder

Sara,

Murapaka,

Haldar

2024

Nanoscale

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“…This area of research has shown great potential since the discovery of Giant Magnetoresistance by Albert Fert and Peter Grunberg, for which they were awarded the Nobel Prize in 2007 [2,3]. Spintronics has served as the foundation for various devices such as magnetic random-access memories (MRAMs) [4,5], logic gates [6][7][8][9], racetrack memories [10,11], sensors [12,13], and artificial neuron synapses [8,[14][15][16]. Despite the technological advancements, spintroncis is still a topic of investigation in terms of the challenges related to energy costs and data capacity [17,18].…”

Section: Description Unitmentioning

confidence: 99%

Micromagnetic modeling of magnetization processes and magnetoelastic interactions

Fattouhi

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Efficient control of the static and dynamic properties of magnetic textures at the nanoscale is one of the key elements towards energy-efficient spintronics. The control of magnetic textures such as domain walls and skyrmions can be achieved using several methods, including magnetic field, spin-polarized current, and laser pulses. These approaches opened up new avenues towards exploring spintronicsbased applications such as racetrack memories, logic gates, artificial neuron synapses, and sensors. However, the growing need to minimize the energy consumption of computational and data storage devices imposes the to find new alternatives to control magnetic systems. One of the promising alternatives that has emerged in the last few years is the use of electric fields. It has been shown that in artificial multiferroics, electric field-induced strain can be used to achieve efficient control over magnetic systems via magnetoelastic coupling. This method showed great potential due to its low energy dissipation rates. Despite these achievements, the strain effects on magnetic systems are still a topic of fundamental research. The aim of this thesis is to explore new ways to use strain to control the statics and dynamics of magnetization in ferromagnetic systems by means of micromagnetic simulations as well as analytical models.First, using electro-mechanical and micromagnetic simulations, we propose a new method to control the current-driven skyrmion motion. We show that in a piezoelectric/magnetic device, a transverse strain gradient can be created due to the non-uniform electric field profile in the piezoelectric layer. Such a strain gradient will be transferred to the magnetic system, inducing a force on the skyrmions that can be used to control their dynamics. In particular, we demonstrate that such a force tunes the skyrmion Hall effect in both ideal and disordered films.Big thanks to Alberto and Vicente for keeping us energized with their awesome coffee shots and tasty pinchos.A huge thank you to my mom and dad! They have been there for me through every step of my academic journey. I couldn't have made it this far without their support and encouragement. Grateful for everything they have done! Lastly, I want to thank my wife for her endless love, support, and encouragement.

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Single-bit full adder and logic gate based on synthetic antiferromagnetic bilayer skyrmions

Cited by 7 publications

References 54 publications

Skyrmion-based logic gates controlled by electric currents in synthetic antiferromagnet

Skyrmion-based logic gates controlled by electric currents in synthetic antiferromagnet

Voltage-controlled magnetic anisotropy gradient-driven skyrmion-based half-adder and full-adder

Micromagnetic modeling of magnetization processes and magnetoelastic interactions

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