Simultaneous Scanning Electron Microscope Imaging of Topographical and Chemical Contrast Using In-Lens, In-Column, and Everhart–Thornley Detector Systems

Abstract

The scanning electron microscope provides a platform for subnanometer resolution characterization of material morphology with excellent topographic and chemical contrast dependent on the used detectors. For imaging applications, the predominantly utilized signals are secondary electrons (SEs) and backscattered electrons (BSEs) that are emitted from the sample surface. Recent advances in detector technology beyond the traditional Everhart-Thornley geometry have enabled the simultaneous acquisition and discrimination of SE and BSE signals. This study demonstrates the imaging capabilities of a recently introduced new detector system that consists of the combination of two in-lens (I-L) detectors and one in-column (I-C) detector. Coupled with biasing the sample stage to reduce electron-specimen interaction volumes, this trinity of detector geometry allows simultaneous acquisition of signals to distinguish chemical contrast from topographical changes of the sample, including the identification of surface contamination. The I-C detector provides 4× improved topography, whereas the I-L detector closest to the sample offers excellent simultaneous chemical contrast imaging while not limiting the minimization of working distance to obtain optimal lateral resolution. Imaging capabilities and contrast mechanisms for all three detectors are discussed quantitatively in direct comparison to each other and the conventional Everhart-Thornley detector.

Agglomeration and long-range edge retraction for Au/Ni bilayer films during thermal annealing

“…No film thickness is provided for P7 as the bilayer metal film is no longer continuous. The phase distribution of different areas within the dewetted film was further investigated usingbackscattered electrons recorded with the T1 detector [30],at a higher magnification (see SEM images of areasP1 through P3 reveal clearly distinguishable film morphologies for the different regions (Fig. 5).…”

“…The morphology and structure of annealed samples were characterized with a FEI Sciosdualbeam instrument (FEI Company, Hillsboro, OR) equipped with both Everhart-Thornleydetector (ETD) and Trinity detector system [30]. The latter consists of athrough-the-lens detector (T1) and through-the-columndetector (T3) to collect backscattered electrons (BSE) and secondary electrons (SE), respectively.…”

“…4b shows that Ni phases reveal some topographical changes while the Au-rich matrix appears relatively smooth. Few holes are observed in the film, as demonstrated by small isolated areas with almost black intensity.Grain boundaries in the Au-rich matrix are observed as almost straight dark lines and varying width, indicating various degrees of grain boundary grooving.Some grain boundary grooves exhibit bright spot-like contrasts that indicate the presence of Au nanoparticles[30].…”

Optimization of Process Parameters to Improve the Effective Area of Deposition in GMAW-Based Additive Manufacturing and its Mechanical and Microstructural Analysis

“…Optical microscopy was carried out using an OLYMPUS GX-71 (Olympus corporation, Tokyo, Japan) and a LEICA DMI300M (Leica Microsystems GmbH, Wetzlar, Germany). Scanning electron microscopy was conducted using a TESCAN VEGA (Oxford Instruments Technology, Beijing, China) and a ZEISS SUPRA (Oxford Instruments plc, Abingdon, UK) using a secondary electron detector [21]. The same samples were then used for microhardness testing using a LECO AMH43 (LECO corporation, Michigan, USA) and KAIRDA THV-1MD (Teshi Precision Instruments corporation, Shanghai, China) with a test load of 200 g and dwell time of 10 s following the guidelines of ASTM E384 [22].…”

Micro cracks distribution and power degradation of polycrystalline solar cells wafer: Observations constructed from the analysis of 4000 samples

“…The BSED is a microstructural-crystallographic characterization technique normally use to study any crystalline or polycrystalline materials [22], whereas the ETD consists of a secondary electron and backscatted electron detector, this detector is used to increase the efficiency of existing secondary electron detectors by adding a light pipe to carry the photon signal from the scintillator inside the evacuated specimen chamber of the electron microscopy [23]. In fact, it is not necessary to capture both images, but, for a better resolution and detection of the inspected wafer, both images have been captured.…”