NO x is emitted in the flue gas from semiconductor manufacturing plants as a byproduct of combustion for abatement of perfluorinated compounds. In order to treat NO x emission, a combined process consisting of a dry plasma process using nonthermal plasma and a wet chemical process using a wet scrubber is performed. For the dry plasma process, a dielectric barrier discharge plasma is applied using a blade-barrier electrode. Two oxidation methods, direct and indirect, are compared in terms of NO oxidation efficiency. For the wet chemical process, sodium sulfide (Na 2 S) is used as a reducing agent for the NO 2 . Experiments are conducted by varying the gas flow rate and input power to the plasma reactor, using NO diluted in air to a level of 300 ppm to simulate exhaust gas from semiconductor manufacturing. At flow rates of ≤5 L/min, the indirect oxidation method verified greater removal efficiency than the direct oxidation method, achieving a maximum NO conversion rate of 98% and a NO x removal rate of 83% at 29.4 kV and a flow rate of 3 L/min. These results demonstrate that the proposed combined process consisting of a dry plasma process and wet chemical process is promising for treating NO x emissions from the semiconductor manufacturing industry. and other chemical changes in the atmosphere and produces aerosols, such as nitric acid (HNO 3 ), that cause acid rain. Selective catalytic reduction (SCR) is a common technique for processing NO x . In the combustion method, however, immediately after the PFCs are burned, a water spray is applied to dissolve the resulting hydrogen fluoride (HF) in water. The problem for SCR is that the water spray brings the target exhaust gas down to a normal temperature, at which the catalyst cannot be activated. Furthermore, the HF can sometimes poison the catalyst for the SCR [7,8], which poses a problem for the treatment of the NO x generated during processing of the PFCs.Plasma-chemical methods that use nonthermal plasma have been proposed as a method of removing the NO x at low temperatures [9][10][11][12][13][14]. The plasma-chemical method oxidizes NO to NO 2 by using nonthermal plasma to promote oxidation, and then it applies a scrubber to reduce the NO 2 to N 2 . Our research group has achieved highly efficient removal of NO x through treatment by a combined process of indirect oxidation by nonthermal plasma together with a sodium sulfite (Na 2 SO 3 ) scrubber [9][10][11][12]. Kim et al. have also achieved NO x removal efficiency of more than 80% using nonthermal plasma-chemical methods to treat the NO x discharged from semiconductor plants [15]. Comparing the NO x removal efficiency of two different reducing agents, Na 2 S and Na 2 SO 3 , Kim et al. found that Na 2 S was highly efficient at removing NO x at 1/10 the concentration of Na 2 SO 3 (0.1 mass%). Although the cost of using Na 2 S is approximately three times higher than that of using Na 2 SO 3 , using Na 2 S as the reducing agent suppresses the reaction of the exhaust gas with oxygen, making high-efficiency treatme...