Simultaneous optimization of dose and focus controls in advanced ArF immersion scanners

Toki, Tsuyoshi; Izikson, Pavel; Kosugi, Junichi; Sakasai, Naruo; Saotome, Keiko; Suzuki, Kazuaki; Kandel, Daniel; Robinson, John C.; Koyanagi, Yuji

doi:10.1117/12.846413

Cited by 4 publications

(3 citation statements)

References 3 publications

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“…Then, the dose and focus offset are calculated by the analysis software. The calculation method using scatterometry has been developed by Hitachi High-Technologies and reported in previous papers [4], [5], [6], [7]. Using the calculated dose and focus offset maps, CDU Master generates a sub-recipe that includes high order optimum dose and focus correction values for each exposure field.…”

Section: Improving CD Uniformity By Dose and Focusmentioning

confidence: 99%

Process Optimization Using OPE-Master and CDU Master

et al. 2013

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OPE matching and CD-Uniformity control have become inevitable steps for most of high volume manufacturing(HVM) of a state-of-the-art devices. OPE matching is a step to match CDs of various patterns from different scanners or steppers. CD-Uniformity control is to stabilize CDs across exposure fields, across wafers and across lots, for HVMs. At a current OPE matching, one usually collects tool properties from each matching tool and import them into simulation software they are using to improve its prediction accuracy. However, generally speaking, this is a time and human resource consuming process, because data acquisition from scanners usually take a lot of time of both human and machine. Furthermore, what makes it more difficult is that an OPE matching, in most cases, requires several iterations. In this paper, we will introduce our latest software named OPE-Master. By employing the software, we can expect following merits. Firstly, with the help of the software, one can be able to automatically import machine properties. This means we can expedite the iterations without sacrifice of the accuracy. Secondly, one can also be able to get better solutions, because it uses all possible adjustment knobs, some of which are ones that unable to be accessed by a third party softwares, with the help of newly developed optimization algorithm that uses a hybrid method of nonlinear optimization and rigorous simulation. Finally, intuitive interface of the software makes it possible for an engineer without much optical simulation experiences to do an OPE matching simulation. In this paper, we will also introduce one of our latest software, called CDU-Master, which will be used to control CD uniformities for a HVM. CDU-Master can analys CDs from various metrology tools, such as, CD-SEMs, OCDs or a macro inspection tools(AMI, for example). CDU-Master can decompose CD errors into focus and dose errors and then derives parameters to correct CDs. One can expect extremely high accuracy of the decomposition, because, CD-SEM as an example, it uses all possible information such as CDs and pattern 3D structure information. The correction parameters, which may include very high order coefficients to be able to deal with very high spatial frequency distribution of errors across a field or across a wafer, will be converted into a format that can be recognized by scanners and then can be exported to scanners automatically, by the software.

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Section: Improving CD Uniformity By Dose and Focusmentioning

confidence: 99%

Process Optimization Using OPE-Master and CDU Master

et al. 2013

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“…Regarding motion control, we introduced a new method called Multi-shot Iterative Learning Control (MILC) [5] , which can reduce errors in the stage trajectory by iterative motion learning. Moreover, to improve CDU, we introduced a new system called CDU Master [6] , which is the dose and focus optimization from CDU scatterometry results.…”

Section: Cdu : Line 25 Space 33 (3σ [Nm])mentioning

confidence: 99%

“…With CDU Master, in addition to the existing optimal dose control, the focus parameters can also be extracted from the metrology data, which are CD and pattern height information measured by scatterometry, and the focus across the wafer can be corrected. This system is the result of joint work with KLA-Tencor, and the details is described elsewhere [6] . In the example shown in Figure 16, the CDU 3σ is remarkably improved after correction, from 3.36 nm to 1.28 nm.…”

Section: Cdu : Line 25 Space 33 (3σ [Nm])mentioning

confidence: 99%

Latest performance of immersion scanner S620D with the Streamlign platform for the double patterning generation

et al. 2010

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Currently, it is considered that one of the most favorable options for the 32 nm HP node is pitch-splitting double patterning, which requires the lithography tool to achieve high productivity and high overlay accuracy simultaneously. In the previous work [1] , we described the concepts and the technical features of Nikon's immersion scanner based on our newly developed platform, Streamlign, designed for 2nm overlay, 200wph throughput, and short setup time. In this paper, we present the latest actual performance of S620D with the Streamlign platform.Owing to the high repeatability of our new encoder metrology system, Bird's Eye Control, and Stream Alignment, S620D achieves less than 2 nm overlay accuracy, less than 15nm focus accuracy, and successful 32 and 22 nm L/S pitchsplitting double patterning exposures. Furthermore, the results at high scanning speed up to 700 mm/s are fine and we have successfully demonstrated over 4,000 wpd throughput, which confirms the potential for high productivity. Nikon has developed this Streamlign as an optimized long life platform based on the upgradable Modular 2 structure for upcoming generations. The performance of S620D indicates the possibility of immersion extension down through the 22 nm HP node and beyond.

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