Simultaneous optimization of doping profile and Ge-dose in base in SiGe HBTs

Khanduri, Gagan; Panwar, B. Brishbhan

doi:10.1109/secon.2007.342969

Cited by 1 publication

(2 citation statements)

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“…The operation speed of SiGe HBTs has increased dramatically, with the consequence of relentless vertical and lateral scaling. The HBTs' operation speed is mainly dominated by the transit time of base, which is strongly influenced by the doping profile and Ge concentration in the base region [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18]. The determination of the doping profile and Ge concentration of the base region is thus crucial for optimal design of SiGe HBTs in advanced communication circuits.…”

Section: Introductionmentioning

confidence: 99%

“…For the SiGe HBTs, it has been reported that the triangular Ge profiles are best suited to achieve the minimum base transit time and trapezoidal Ge profiles are best suited to get high current gain in SiGe HBTs [18]. The GP approach has recently been utilized to simultaneously optimize the Ge-dose and base doping profile in SiGe HBTs [1,2]. However, the co-optimization of cut-off frequency and current gain in SiGe HBTs are still lacked.…”

Section: Introductionmentioning

confidence: 99%

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Doping profile and Ge-dose optimization for silicon–germanium heterojunction bipolar transistors

Chen

Hwang

2009

Semicond. Sci. Technol.

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The speed of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) has been dramatically increased. It is known that the speed of HBTs is dominated by the base transit time, which could be influenced by the doping profile in the base region and the Ge concentration. In this study, the design of the doping profile and Ge-dose concentration for SiGe HBTs are mathematically formulated and solved by a technique of geometric programming (GP). The solution calculated by the GP method is guaranteed to be a global optimal. The accuracy of the adopted numerical optimization technique is first confirmed by comparing with two-dimensional device simulation. The result of this study shows that a 23% Ge fraction may maximize the current gain; furthermore, a 12.5% Ge may maximize the cutoff frequency for the explored device, where a 254 GHz cutoff frequency is achieved.

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