ing from the series parasitic inductance and resistance of the fold-beams that is used for actuation. An optimized spring structure is under consideration to replace in future to improve the RF performance at high frequency. Moreover, larger initial capacitance values could be achieved by further increasing the thickness of the metal structure.
CONCLUSIONBoth area-tuning and gap-tuning types of low-voltage wide-tuning variable capacitors are formed by using a novel low-cost metal micromachining technique. With only two layers of mask used, the post-CMOS compatible micromachining process is with a potential to integrate the RF passives into RF ICs. The fabricated area-tuning and gap-tuning capacitors have demonstrated large tuning ratios of 3.1:1 and 2.92:1, respectively, under a low actuating voltage of 4 V. High Q-factor of 169 at 1 GHz and 46 at 2 GHz for the area-tuning capacitor, as well as, 87 at 1 GHz and 35 at 2 GHz for the gap-tuning capacitor are measured. In view of the large tuning range and the high RF performance, these variable capacitors are promising as building blocks for on-chip RF applications. Besides, the developed metal micromachining technique can be widely used for post-CMOS integration of the RF passives with RF ICs.
ABSTRACT:We present a potential sensor head for the simultaneous measurement of temperature and strain based on the concatenation of two long-period fiber gratings arc-induced in different fibers. Despite being the temperature and strain sensitivities of the individual gratings well defined, we demonstrate that the sensor cannot perform the simultaneous measurement of those physical parameters. This fact, results from the uncertainty in finding the determinant of the inverse matrix.ABSTRACT: An improved integration approach for segmented 3D shapes using projected digitalized 2D pattern is presented. The digital 2D patterns are fabricated based on lithography techniques. Geometrical accuracy better than 0.5 m can be achieved. Contrast ratio of the fringe pattern can be precisely controlled as well. With this pattern, integrated accuracy better than one part in one hundredth of the pixel size can be achieved.