2023
DOI: 10.1103/physrevresearch.5.033048
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Simultaneous measurement of mid-infrared refractive indices in thin-film heterostructures: Methodology and results for GaAs/AlGaAs

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Cited by 4 publications
(1 citation statement)
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“…Gallium Arsenide (GaAs) transmits about 50% light on an average in mid to long wave infrared light because of high refractive index [1][2] making it unsuitable to use in optoelectronic devices such as photodetectors [3,4], light emitting diodes (LEDs) [5,6] and Solar Cells [7,8,9]. Consequences of high index of refraction are Total internal reflection and Fresnel reflections at semiconductor-air interface.…”
Section: Introductionmentioning
confidence: 99%
“…Gallium Arsenide (GaAs) transmits about 50% light on an average in mid to long wave infrared light because of high refractive index [1][2] making it unsuitable to use in optoelectronic devices such as photodetectors [3,4], light emitting diodes (LEDs) [5,6] and Solar Cells [7,8,9]. Consequences of high index of refraction are Total internal reflection and Fresnel reflections at semiconductor-air interface.…”
Section: Introductionmentioning
confidence: 99%