Simultaneous measurement of infrared absorption coefficient of Carbon doped Al0.33Ga0.67As thin film and thermal boundary resistance between thin film and heavily Zn doped GaAs substrate using spectrally-resolved modulated photothermal infrared radiometry

Pawlak, M.; Horny, Nicolas; Scholz, Sven; Ebler, C.; Ludwig, Arne; Wieck, A. D.

doi:10.1016/j.tca.2018.06.016

Cited by 8 publications

(3 citation statements)

References 16 publications

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“…These processes are strongly dependent on the band gap of the material but also on its thermal properties. The increase in thermal diffusivity is associated with the decrease in carriers' lifetime as a result of the increase in carriers' concentration according to the relation n ∝ 1/τ [10,25], where τ is the carrier lifetime and n is the carriers' concentration. Furthermore, the modification of TiO 2 introduced additional defects within the material, which in turn limited the carriers' lifetime since they act as recombination centers in the band gap.…”

Section: Indirect Band Gap Evmentioning

confidence: 99%

“…Unfortunately, their position and intensity critically depend on the nature of the semiconductors (e.g., size, crystal phase and morphology), excitation wavelength, irradiation time and the measurement circumstances, which may disturb the measurements and give unreliable results. Thus, the use of more sensitive and reliable techniques is required, such as those based on photothermal effect [9][10][11][12][13]. Among them, photothermal beam deflection spectrometry (BDS) is of high interest as it is suitable for the characterization of opaque and weakly absorbing samples.…”

Section: Introductionmentioning

confidence: 99%

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Thermo-Optical Characterization of Cu- and Zr-Modified TiO2 Photocatalysts by Beam Deflection Spectrometry

et al. 2021

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Cu/Zr-modified TiO2 photocatalysts were prepared in the form of nanopowders and characterized by photothermal spectrometry, UV–Vis spectrophotometry and X-ray diffraction (XRD) to investigate the effect of Cu/Zr content on their thermo-optical and transport properties. Adding Cu (0.05%) caused a change in the light absorption range limit, which reduced from 3.25 eV for pure TiO2 to 2.85 eV for Cu-modified TiO2. The decrease in energy band gap was accompanied by a 19.5% decrease in the charge carrier lifetime, which is not favorable for photocatalysis. The decrease in charge carrier lifetime can be minimized by additional modification of TiO2 with Zr (1%), which showed insignificant effects on the energy band gap of the investigated materials. Furthermore, modification of TiO2 with Zr affected the material’s structure and increased its specific surface area, which improved the adsorption of degraded compounds as well as the absorption of light. Altogether, these effects resulted in higher photocatalytic degradation rate constants of the investigated TiO2-based photocatalyst. It was also found that modification of TiO2 with Cu and/or Zr increases both the material’s thermal diffusivity and conductivity due to changes in the band gap and structure of material. Beam deflection spectrometry (BDS) has demonstrated high potential in materials’ characterization which stems from its high sensitivity and precision.

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Section: Indirect Band Gap Evmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thermo-Optical Characterization of Cu- and Zr-Modified TiO2 Photocatalysts by Beam Deflection Spectrometry

et al. 2021

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“…It is not routinely applied to measurements of optical properties such as coefficient spectra of optical absorption. Photo thermal radiometry is a technique applied to characterize materials recombination and thermal parameters [19][20][21][22][23]. A comparison of these methods from the point of view of investigations of recombination parameters in silicon is presented in paper [24].…”

Section: Introductionmentioning

confidence: 99%

Metrology and Measurement Systems

Dorywalski,

Chrobak,

Maliński

2020

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This work presents results of comparative studies of the optical absorption coefficient spectra of ion implanted layers in silicon. Three nondestructive and noncontact techniques were used for this purpose: spectroscopic ellipsometry (SE), modulated free carriers absorption (MFCA) and the photo thermal radiometry (PTR). Results obtained with the ellipsometric method are the proof of correctness of the results obtained with the MFCA and PTR techniques. These techniques are usually used for investigations of recombination parameters of semiconductors. They are not used for investigations of the optical parameters of semiconductors. Optical absorption coefficient spectra of Fe + and Ge + high energy and dose implanted layers in silicon, obtained with the three techniques, are presented and compared.

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Thermophysical properties of refractory W-50.4%Re and Mo-39.5%Re thin alloy layers deposited on silicon and silica substrates

Trefon-Radziejewska¹,

Juszczyk²,

Fleming³

et al. 2020

International Journal of Refractory Metals and Hard Materials

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Simultaneous measurement of infrared absorption coefficient of Carbon doped Al0.33Ga0.67As thin film and thermal boundary resistance between thin film and heavily Zn doped GaAs substrate using spectrally-resolved modulated photothermal infrared radiometry

Cited by 8 publications

References 16 publications

Thermo-Optical Characterization of Cu- and Zr-Modified TiO2 Photocatalysts by Beam Deflection Spectrometry

Thermo-Optical Characterization of Cu- and Zr-Modified TiO2 Photocatalysts by Beam Deflection Spectrometry

Metrology and Measurement Systems

Thermophysical properties of refractory W-50.4%Re and Mo-39.5%Re thin alloy layers deposited on silicon and silica substrates

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