Simultaneous Growth of Pure Wurtzite and Zinc Blende Nanowires

Abstract

The opportunity to engineer III–V nanowires in wurtzite and zinc blende crystal structure allows for exploring properties not conventionally available in the bulk form as well as opening the opportunity for use of additional degrees of freedom in device fabrication. However, the fundamental understanding of the nature of polytypism in III–V nanowire growth is still lacking key ingredients to be able to connect the results of modeling and experiments. Here we show InP nanowires of both pure wurtzite and pure zinc blende grown simultaneously on the same InP [100]-oriented substrate. We find wurtzite nanowires to grow along and zinc blende counterparts along . Further, we discuss the nucleation, growth, and polytypism of our nanowires against the background of existing theory. Our results demonstrate, first, that the crystal growth conditions for wurtzite and zinc blende nanowire growth are not mutually exclusive and, second, that the interface energies predominantly determine the crystal structure of the nanowires.

Compositional and structural engineering of inorganic nanowires toward advanced properties and applications

“…A nanowire FET device has great potential to achieve advanced device performance, with tunable channel characteristics and flexible device configuration . From the synthesis viewpoint, typical vapor deposition technology facilitates a high yield of nanowires of uniform quality as well as a high degree of controllability of the nanowire thickness, length, crystal structure, and defects . Additionally, a nanowire derived from deposition methods with an epitaxial relationship to the semiconductor substrate facilitates gate‐all‐around technology that displays more effective gate‐voltage control .…”

“…47 From the synthesis viewpoint, typical vapor deposition technology facilitates a high yield of nanowires of uniform quality as well as a high degree of controllability of the nanowire thickness, length, crystal structure, and defects. 28 Additionally, a nanowire derived from deposition methods with an epitaxial relationship to the semiconductor substrate facilitates gate-all-around technology that displays more effective gate-voltage control. 32,48 Benefiting from the huge specific surface area of nanowires, doping and heterostructure interface engineering can largely promote the device's figures of merit (such as mobility, transconductance, on-off ratio, and threshold voltage).…”

“…To date, strategies for the controllable synthesis of nanowires with respect to their morphology, size, and crystal phase have been significantly developed . These advances facilitate fundamental research related to their electrical, photonic, optoelectronic, and mechanical properties (Figure ).…”

“…25,26 To date, strategies for the controllable synthesis of nanowires with respect to their morphology, size, and crystal phase have been significantly developed. [27][28][29][30][31] These advances facilitate fundamental research related to their electrical, photonic, optoelectronic, and mechanical properties ( Figure 1). The physical relevance between a specific functionality and nanowire characteristics can accordingly be possibly acquired.…”

Understanding the growth of III-V semiconductor nanowires with component addition in metal-organic chemical vapor deposition

“…107 Even grown on non-(1 ̅ 1 ̅ 1 ̅ ) substrate plane, it can be found that nanowires were inclined to align themselves along [1 ̅ 1 ̅ 1 ̅ ]/[0001 ̅ ]. [108][109][110][111] However, the nucleation energy difference between WZ and ZB is quite small at (1 ̅ 1 ̅ 1 ̅ ) or (0001 ̅ ) catalyst-nanowire interface, which undesirably leads to the mixture of WZ and ZB (i.e. polytypism) in nanowires.…”