Simultaneous fabrication of nanogap electrodes using field-emission-induced electromigration

Ito, Mitsuki; Yagi, Mamiko; Morihara, Kohei; Shirakashi, Jun–ichi

doi:10.1063/1.4923411

Cited by 9 publications

(1 citation statement)

References 16 publications

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“…22) In a previous study, we developed a simple technique for the fabrication of nanogaps with well-controlled tunnel resistance called "activation." [23][24][25][26][27][28][29][30] This method is based on electromigration (EM) induced by a Fowler-Nordheim (F-N) field emission current. The activation scheme controls the tunnel resistance of the nanogaps by adjusting the magnitude of the field emission current.…”

Section: Introductionmentioning

confidence: 99%

Gold nanogap-based artificial synapses

Sakai

Satō

Kiyokawa

et al. 2020

Jpn. J. Appl. Phys.

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The basic building blocks for brain-inspired computing are neurons and their inter-cellular connections, called synapses. In this paper, we report artificial synapses composed of simple gold (Au) nanogaps that function using an electromigration-based method called "activation." In the activation technique, metal-atom transport is induced by a field emission current, resulting in a change in gap separation. Synaptic functionalities, including long-term potentiation, long-term depression, and spike-timing-dependent plasticity, were successfully implemented in the electromigrated Au nanogaps using activation. Furthermore, the integration of four artificial synapses in a 2 × 2 array and image memorization were achieved with the Au nanogap-based artificial synapses. These results illustrate that electromigrated Au nanogaps hold promise as synaptic devices for bio-inspired computational systems.

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Section: Introductionmentioning

confidence: 99%

Gold nanogap-based artificial synapses

Sakai

Satō

Kiyokawa

et al. 2020

Jpn. J. Appl. Phys.

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Investigation of electromigration induced by field emission current flowing through Au nanogaps in ambient air

Inoue

Yagi

Ito

et al. 2017

Journal of Applied Physics

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We developed a simple and controllable nanogap fabrication method called “activation.” In the activation technique, electromigration is induced by a field emission current passing through the nanogaps. Activation enables the electrical properties of Ni nanogaps in a vacuum to be controlled and is expected to be applicable to Au nanogaps even in ambient air. In this study, we investigated the activation properties of Au nanogaps in ambient air from a practical point of view. When activation was performed in ambient air, the tunnel resistance of the Au nanogaps decreased from over 100 TΩ to 3.7 MΩ as the preset current increased from 1 nA to 1.5 μA. Moreover, after activation in ambient air with a preset current of 500 nA, the barrier widths and heights of the Au nanogaps were estimated using the Simmons model to be approximately 0.5 nm and 3.3 eV, respectively. The extracted barrier height is smaller than that of 4.6 eV resulting from activation in a vacuum and much lower than the work function of bulk Au. This difference implies the presence of atmospherically derived moisture or contamination adsorbed on the nanogaps. These results suggest that activation can be utilized for Au nanogap fabrication even in ambient air.

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Simultaneous arrayed formation of single-electron transistors using electromigration in series-connected nanogaps

et al. 2018

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A field-emission-induced electromigration method (activation) is reported for integrating single-electron transistors operating at T = 298 K. The field emission currents between the two opposite electrodes of each series-connected nanogap are tuned to accumulate Ni atoms within the gaps. For ten series-connected nanogaps, the resistance (VD/ID), obtained using the current-voltage (ID-VD) properties of these nanogaps during the activation procedure, is observed to decrease on activation. As a result, island structures are formed within the gaps, and the nanogap-based single-electron transistors can be integrated, when atom migration occurs at the tip of each nanogap electrode. After activating the ten series-connected nanogaps with a preset current, IS = 1 nA, current suppression (representative of coulomb blockade) is not observed in the fabricated devices. On the other hand, coulomb blockade, which depicts the charging and discharging of the nanoislands, can be observed at room temperature, after activation with a preset current, IS = 150 nA. Furthermore, the modulation properties of the coulomb blockade voltage by the gate voltage are also determined at room temperature. These results experimentally demonstrate the arrayed formation of ten single-electron transistors operating at room temperature, constituting a significant step toward the practical realization of single-electron-transistor-based systems.

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Simultaneous fabrication of nanogap electrodes using field-emission-induced electromigration

Cited by 9 publications

References 16 publications

Gold nanogap-based artificial synapses

Gold nanogap-based artificial synapses

Investigation of electromigration induced by field emission current flowing through Au nanogaps in ambient air

Simultaneous arrayed formation of single-electron transistors using electromigration in series-connected nanogaps

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