Simultaneous existence and atomic arrangement of CuPt-type and CuAu-I type ordered structures near ZnTe/ZnSe heterointerfaces

Lee, H. S.; Lee, J. Y.; Kim, Taewhan; Lee, D. U.; Choo, D. C.; Kim, M. D.

doi:10.1063/1.1459744

Cited by 10 publications

(3 citation statements)

References 23 publications

(15 reference statements)

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“…Indeed, for similar reasons a marked deviation from randomly distributed element VI atoms was already observed at the ZnSe/ZnTe interface. It was shown that spontaneously ordered ZnSeTe could form preferentially to random alloys [13].…”

Section: Contributed Articlementioning

confidence: 99%

Se‐Se isoelectronic centers in high purity CdTe

Najjar¹,

Golnik²,

André³

et al. 2010

Phys. Status Solidi (c)

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We evidence zero‐dimensional exciton states trapped on isoelectronic Se centers in CdTe quantum wells, δ‐doped with Se. Thanks to special precautions taken to have very high purity CdTe heterostructures, it is possible to observe, in photoluminescence spectra, sharp discrete lines arising from individual centers related to the Se doping. These emission lines appear at about 40 meV below the CdTe band gap energy. The most prominent lines are attributed to the recombination of excitons bound to nearest‐neighbor selenium pairs in a tetrahedral CdTe environment. This assignment is confirmed by a common linear polarization direction of the emitted light, parallel to <110>. These excitons localized on individual isoelectronic traps are good candidates as single photon emitters (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Contributed Articlementioning

confidence: 99%

Se‐Se isoelectronic centers in high purity CdTe

Najjar¹,

Golnik²,

André³

et al. 2010

Phys. Status Solidi (c)

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“…Apart from the intrinsic defects, different ordered structures have also been reported in the epitaxially grown CdZnTe thin films on various substrates, including the CuAu-I type, 24 CuPt type 25,26 and Cu 3 Au type. 27,28 Similar to that in III–V group semiconductors, such ordering has significant influence on the electrical and optical properties of CdZnTe because of the changed energy gap.…”

Section: Introductionmentioning

confidence: 99%

Formation and characterization of a CuPt-A type ordered structure in cadmium zinc telluride single crystals

Sun

Deng

2022

CrystEngComm

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“…In recent years, atomic ordering and phase separation has also been observed in several heteroepitaxial II-VI systems, e.g. (Cd,Zn)Se [2][3][4], (Cd,Mn,Zn)Se [3,[5][6][7], (Fe,Zn)Se [8], (Cd,Zn)Te [9][10][11], and Cd(Se,Te) [12]. Atomic ordering and phase separation in IV-VI systems has, to the best of our knowledge, only been reported once in epitaxial (Pb,Eu)Te [13].…”

Section: Introductionmentioning

confidence: 99%

Atomic Ordering in Self-assembled Epitaxial II-VI and IV-VI Compound Semiconductor Quantum Dot Systems

et al. 2002

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Transmission electron microcopy (TEM) in both the parallel illumination and scanning probe mode revealed atomically ordered entities within a 5 to 250 nm range in a IV-VI and a II-VI compound semiconductor quantum dot (QD) system. While the II-VI system was a nominal [001] CdSe/(Mn 0.1 Zn 0.9 )Se multilayer structure with the QDs embedded, the IV-VI system nominally consisted of [111] PbSe islands. The comparison of photoluminescence (PL) spectra from the CdSe/(Mn 0.1 Zn 0.9 )Se structure with those of a reference structure, that was grown to the same nominal specification under otherwise identical conditions except that no Mn was incorporated into the cladding layers, revealed for the former sample two peaks at approximately 2 and 2.1 eV. We tentatively attribute these two PL peaks to two groups of atomically ordered entities.

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Simultaneous existence and atomic arrangement of CuPt-type and CuAu-I type ordered structures near ZnTe/ZnSe heterointerfaces

Abstract: Existence and atomic arrangement of the CuPt-type ordered structure near the ZnTe/GaAs heterointerface due to residual impurities

Cited by 10 publications

References 23 publications

Se‐Se isoelectronic centers in high purity CdTe

Se‐Se isoelectronic centers in high purity CdTe

Formation and characterization of a CuPt-A type ordered structure in cadmium zinc telluride single crystals

Atomic Ordering in Self-assembled Epitaxial II-VI and IV-VI Compound Semiconductor Quantum Dot Systems

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