Simultaneous diffusion of Si and Ge in isotopically controlled heterostructures

Kube, R.; Bracht, H.; Hansen, J. Lundsgaard; Larsen, A. Nylandsted; Häller, E. E.; Paul, S.; Lerch, W.

doi:10.1016/j.mssp.2008.07.005

Cited by 26 publications

(27 citation statements)

References 33 publications

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“…[19]. For our growth temperature, the resulting calculated diffusion length for Ge diffusion into Si is found below 100 nm, very much inferior to (much less than) the typical 30 mm extension of the diffusion zone contrast in our observations.…”

Section: Discussioncontrasting

confidence: 81%

Investigation of 3C-SiC growth on Si(111) by vapor–liquid–solid transport using a SiGe liquid phase

Berckmans¹,

Auvray²,

Ferro³

et al. 2012

Journal of Crystal Growth

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Section: Discussioncontrasting

confidence: 81%

Investigation of 3C-SiC growth on Si(111) by vapor–liquid–solid transport using a SiGe liquid phase

Berckmans¹,

Auvray²,

Ferro³

et al. 2012

Journal of Crystal Growth

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“…7 As the aggressive scaling of modern devices will soon lead to devices with characteristic dimensions of only a few nanometers, the understanding of atomic diffusion and the stability of related complexes is becoming increasingly important in group IV semiconductors. [8][9][10][11][12] The most fundamental process of matter transport in Si 1−x Ge x is self-diffusion, which has been studied by both experimental [13][14][15][16][17][18][19][20] and theoretical 21,22 methods. Although E centers have been studied extensively in Si ͑Refs.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear stability ofEcenters inSi1−xGex: Electronic structure calculations

et al. 2008

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Electronic structure calculations are used to investigate the binding energies of defect pairs composed of lattice vacancies and phosphorus or arsenic atoms ͑E centers͒ in silicon-germanium alloys. To describe the local environment surrounding the E center we have generated special quasirandom structures that represent random silicon-germanium alloys. It is predicted that the stability of E centers does not vary linearly with the composition of the silicon-germanium alloy. Interestingly, we predict that the nonlinear behavior does not depend on the donor atom of the E center but only on the host lattice. The impact on diffusion properties is discussed in view of recent experimental and theoretical results.

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“…6 A fundamental quantity is the self-diffusivity of the host atom in crystalline materials. From self-diffusion experiments with isotopically enriched heterostructures, important information on the properties of native point defects in Si, 7 SiGe, 8 GaP, 9 GaAs, 10 GaSb, 11 SiC, 12 SiN, 13 and TiB 2 ͑Ref. 14͒ were obtained.…”

mentioning

confidence: 99%

Self-diffusion in germanium isotope multilayers at low temperatures

Hüger¹,

Tietze²,

Lott³

et al. 2008

Applied Physics Letters

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113

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Simultaneous diffusion of Si and Ge in isotopically controlled heterostructures

Cited by 26 publications

References 33 publications

Investigation of 3C-SiC growth on Si(111) by vapor–liquid–solid transport using a SiGe liquid phase

Investigation of 3C-SiC growth on Si(111) by vapor–liquid–solid transport using a SiGe liquid phase

Nonlinear stability ofEcenters inSi1−xGex: Electronic structure calculations

Self-diffusion in germanium isotope multilayers at low temperatures

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