Blue InGaN chip-pumped short-wave infrared (SWIR) emitters
have
aroused tremendous attention and shown emerging applications in diverse
fields such as healthcare, retail, and agriculture. However, discovering
blue light-emitting diode (LED)-pumped SWIR phosphors with a central
emission wavelength over 1000 nm remains a significant challenge.
Herein, we demonstrate the efficient broadband SWIR luminescence of
Ni2+ by simultaneously incorporating Cr3+ and
Ni2+ ions into the MgGa2O4 lattice,
with Cr3+ as the sensitizer and Ni2+ as the
emitter. Because of the strong blue light absorption of Cr3+ and high energy transfer efficiency to Ni2+, the obtained
MgGa2O4:Cr3+, Ni2+ phosphors
show intense SWIR luminescence with a peak wavelength at 1260 nm and
a full width at half maximum (FWHM) of 222 nm under the excitation
of blue light. The optimized SWIR phosphor presents an ultra-high
SWIR photoluminescence quantum efficiency of 96.5% and outstanding
luminescence thermal stability (67.9%@150 °C). A SWIR light source
has been fabricated through a combination of the prepared MgGa2O4:Cr3+, Ni2+ phosphor and
a commercial 450 nm blue LED chip, delivering a maximum SWIR radiant
power of 14.9 mW at 150 mA input current. This work not only demonstrates
the feasibility of developing broadband high-power SWIR emitters using
converter technology but also presents new insights into the importance
of SWIR technology.