Simulations and Measurements of Failure Modes in SiC Cascode JFETs under Short Circuit Conditions

Agbo, S.N.; Bashar, Erfan; Wu, Ruizhu; Mendy, Simon; Gonzalez, Jose Ortiz; Alatise, Olayiwola

doi:10.1109/compel52922.2021.9646031

Cited by 3 publications

(1 citation statement)

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“…The failure mode of SiC Cascode JFETs and GaN/SiC cascode devices under short circuit conditions has been investigated respectively in [23] and [24].…”

Section: Introductionmentioning

confidence: 99%

A Configuration of 3-phase Traction Inverter Employing {SiC} Devices

Pellitteri

Tommaso

Miceli

et al. 2022

2022 IEEE 16th International Conference on Compatibility, Power Electronics, and Power Engineering (CPE-POWERENG)

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In the scenario of a more and more sustainable society, an increasing electrification in different fields, such as mobility and industrial applications, is foreseen in the next decades. As far as power electronics is concerned, a challenging perspective is represented by achieving higher and higher switching frequencies while maintaining high voltage and low power losses. To do that, emerging semiconductor technologies are supposed to be increasingly employed, as well as innovative topologies of connections among switching devices. Among them, the cascode configuration can notably contribute to achieve high levels of dV/dt without losing efficiency. In this paper, a 3-phase Pulse Width Modulated (PWM) inverter based on a cascode connection for each of its six switches is proposed and some promising experimental results are provided. SiC technology has been used for each power device, while a normally-off/normallyon combination of switching devices has been selected to implement the cascode-based switch.

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“…The failure mode of SiC Cascode JFETs and GaN/SiC cascode devices under short circuit conditions has been investigated respectively in [23] and [24].…”

Section: Introductionmentioning

confidence: 99%