Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness

Zhang, Maolin; Guo, Yufeng; Zhang, Jun; Yao, Jiafei; Chen, Jing

doi:10.1186/s11671-020-03360-7

Cited by 23 publications

(5 citation statements)

References 35 publications

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“…It can be described as a gated p-i-𝑛+ diode, with the gate residing on an undoped or intrinsic region, which forms the channel. 𝑝+ region is named as the source and 𝑛+region is the drain [9,10]. A look at the structure gives the impression of its similarity to the conventional MOSFET structure, but there exists a fundamental difference in the switching mechanism.…”

Section: Tfet Basic Definition and Its Workingmentioning

confidence: 99%

Tunnelling FETs, the Non-conventional Transistors: Basics

Sheoran¹,

Shokeen²,

Sangwan³

et al. 2023

Proceedings of the 3rd International Conference on ICT for Digital, Smart, and Sustainable Development, ICIDSSD 2022, 24-25 Mar

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The tunnel field-effect transistor (TFET) exploits the band to band tunneling (BTBT) phenomenon for carrier injection and this helps to lower the subthreshold swing <60mV/decade due to the absence of thermal (kT/q) dependence. Tunnel Field Effect Transistor has been evolved by T. Baba in 1992, and provides an alternative to conventional switch based on various performance parameters. TFETs show tremendous potential from the low-power applications point of view. However, the challenge to gain a high Ion/Ioff ratio in combination with subthreshold swing <60mV/decade still persists for devices to be used in high-performance circuits. To achieve this, it is required that many technologies to be used in combination for the realization of such hetero-structure TFET devices.

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Section: Tfet Basic Definition and Its Workingmentioning

confidence: 99%

Tunnelling FETs, the Non-conventional Transistors: Basics

Sheoran¹,

Shokeen²,

Sangwan³

et al. 2023

Proceedings of the 3rd International Conference on ICT for Digital, Smart, and Sustainable Development, ICIDSSD 2022, 24-25 Mar

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show abstract

“…However, the main problems of TFETs are low on-state current (I on ), high off-state current (I off ), and ambipolar behavior, which are the main challenges that traditional TFETs face [11][12][13]. The driven current of the conventional TFETs is determined by the gatemodulated tunneling diode.…”

Section: Introductionmentioning

confidence: 99%

“…Going forward, silicon germanium (SiGe) will most likely be adopted for future lowpower very-large-scale integration (VLSI) technologies among all material systems for TFET applications, owing to its VLSI compatibility, mature synthesis techniques, and tunable bandgap [11,33,34]. In this work, we propose a new Si 1-x Ge x /Si heterostructure TFET with high-k/low-k dual material heterogeneous gate dielectric and a heavily doped pocket within the channel (HJ-HD-P-DGTFET).…”

Section: Introductionmentioning

confidence: 99%

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

et al. 2023

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In this paper, a new SiGe/Si heterojunction double-gate heterogate dielectric tunneling field-effect transistor with an auxiliary tunneling barrier layer (HJ-HD-P-DGTFET) is proposed and investigated using TCAD tools. SiGe material has a smaller band gap than Si, so a heterojunction with SiGe(source)/Si(channel) can result in a smaller tunneling distance, which is very helpful in boosting the tunneling rate. The gate dielectric near the drain region consists of low-k SiO2 to weaken the gate control of the channel-drain tunneling junction and reduce the ambipolar current (Iamb). In contrast, the gate dielectric near the source region consists of high-k HfO2 to increase the on-state current (Ion) through the method of gate control. To further increase Ion, an n+-doped auxiliary tunneling barrier layer (pocket)is used to reduce the tunneling distance. Therefore, the proposed HJ-HD-P-DGTFET can obtain a higher on-state current and suppressed ambipolar effect. The simulation results show that a large Ion of 7.79 × 10−5 A/μm, a suppressed Ioff of 8.16 × 10−18 A/μm, minimum subthreshold swing (SSmin) of 19 mV/dec, a cutoff frequency (fT) of 19.95 GHz, and gain bandwidth product (GBW) of 2.07 GHz can be achieved. The data indicate that HJ-HD-P-DGTFET is a promising device for low-power-consumption radio frequency applications.

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“…The DM-FET biosensors performance is limited by short channel effects (SCEs), which are encountered in the process of downscaling the device size, and the FET device's subthreshold swing restriction also becomes one of the main obstacles to achieving better sensitivity results [9][10]. Because of its capacity to overcome the constraint on the subthreshold swing (SS < 60 mV/Dec) and its novel band-to-band tunneling of charge carriers, the tunnel FET device has arisen as a possible alternative to the traditional FET-based device [11][12][13][14][15][16][17][18][19][20].…”

Section: I: Introductionmentioning

confidence: 99%

A Dielectric Modulated Step-Channel Junction-Less TFET (DM-SC-JLTFET) for Label-Free Detection of Breast Cancer Cells: Design and Sensitivity Analysis

Bitra,

Komanapalli

2023

Sens Imaging

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This work designs a novel dielectric modulated step channel Junctionless tunnel eld effect (DM-SC-JLTFET) for the label-free detection of breast cancer cells using their dielectric constant (K) values. The dielectric modulation technique is exploited to detect breast cancer cells (BCC) whose K values are observed at 200 MHz frequency using an open-ended coaxial probe technique. The charge plasma concept is employed to suppress the random dopant uctuation (RDF). The usage of this concept rendering the complex fabrication process simple and affordable. A novel step channel structure has been implemented with reduced substrate thickness for the TFET device that improves the e cacy of the biosensor. The proposed device uses on-current (I on ) and ambipolar current (I amb ) to measure the sensitivity of cancer biomolecules. An in-depth analysis has been carried out for the biosensor by considering performance parameters such as the electrostatics of the device, energy band diagram, lateral electric eld, and threshold voltage (V th ). The device sensitivity is analyzed using parameters like I on /I off , I off /I amb current ratio, Subthreshold Swing (SS), and V th . The proposed device reports high detection sensitivity of 2.683x10 6 and a low SS of 32 mV/dec for breast cancer cell biomolecule T47D (K = 32), effectively reducing the RDF effect. The simulated device shows enhanced sensitivity and higher compatibility for breast cancer cell detection, and this device will be an excellent alternative to classical vivo breast cancer detection.

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Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness

Cited by 23 publications

References 35 publications

Tunnelling FETs, the Non-conventional Transistors: Basics

Tunnelling FETs, the Non-conventional Transistors: Basics

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

A Dielectric Modulated Step-Channel Junction-Less TFET (DM-SC-JLTFET) for Label-Free Detection of Breast Cancer Cells: Design and Sensitivity Analysis

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