Simulation on A Novel Ga-doped Phase Change Memory for Next Generation Embedded Non-Volatile Memory Application

Cheng, Xiulan; Yin, Wen; Feng, Zhigang; Liang, Tian-Yi

doi:10.1109/asmc.2008.4529004

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A Pcm Cell Module1

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2014

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“…The thermal conductivity "k" is temperature dependent. In this model, the value of k corresponding to operating temperature was used [17].…”

Section: A Pcm Cell Modulementioning

confidence: 99%

Improved SPICE model for Phase Change Memory cell

El-Hassan

Kumar

Almurib

2014

2014 5th International Conference on Intelligent and Advanced Systems (ICIAS)

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This paper presents an LTSpice model for a Phase Change Memory (PCM) cell that accurately simulate the temperature profile, the crystalline fraction and the resistance of the cell as a function of the programming pulse based on physical theories. The model is able to generate the I-V characteristics of a PCM cell, and precisely simulate the drift phenomenon of resistance and threshold voltage at the amorphous phase. The parameters in the model are calibrated with experimental data, and the exact duration of the programming pulse and OFF time are calculated to accurately assess the impact of time. The simulation results of the proposed PCM model are in close agreement with experimental results.

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“…The thermal conductivity "k" is temperature dependent. In this model, the value of k corresponding to operating temperature was used [17].…”

Section: A Pcm Cell Modulementioning

confidence: 99%