Simulation of thin film growth

Hrach, R.

doi:10.1080/00207219008920291

Cited by 12 publications

(3 citation statements)

References 11 publications

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“…The Monte Carlo statistical model of R. Hrach et al simulates the early stages of evaporated metal film formation [56][57][58]. It has culminated into a very fundamental model where atomistic processes are simulated by molecular dynamics and larger-scale events are simulated by Monte Carlo kinetics [59].…”

Section: Surface Topographymentioning

confidence: 99%

Low Pressure Radio Frequency Ammonia Plasma Surface Modification on Poly(ethylene terephthalate) Films and Fibers: Effect of the Polymer Forming Process

Öteyaka

Chevallier

Turgeon

et al. 2011

Plasma Chem Plasma Process

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We investigated the effect of a polyethylene terephthalate (PET) forming process on radiofrequency ammonia plasma surface-treated PET flat films and fibres obtained by melt blowing. Ammonia plasma treatment allowed for the incorporation of amino functionalities on both the film and fibre surfaces, with higher values observed at very short treatment times. This plasma treatment also induced polymer chain scissions which were observed as the formation of hydrophilic nodules that coalesced together and were loosely bound to the underlying polymeric materials. These plasma-induced surface damages were notably more important on the melt-blown PET fibres. Consequently, maximisation of the surface amino groups with minimal polymer chain breaking was achieved using very short plasma treatment times (typically 1 s). We also demonstrated that the polymer forming process must be taken into account when plasma modifications are to be performed on PET, as it may already lead to polymer chain breakings subsequently added to those induced in the plasma environment.

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Section: Surface Topographymentioning

confidence: 99%

Low Pressure Radio Frequency Ammonia Plasma Surface Modification on Poly(ethylene terephthalate) Films and Fibers: Effect of the Polymer Forming Process

Öteyaka

Chevallier

Turgeon

et al. 2011

Plasma Chem Plasma Process

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“…For inclusion of surface-diffusion process in this model the stochastic gas model [47] was employed. The surface-diffusion process is directly related to the thermal energy of adatoms on the surface.…”

Section: Original Papermentioning

confidence: 99%

“…However, data are rare and some structural readjustment in the models are artificial. Hrach [47] gives a good review on the computer models for thin-film simulation.…”

Section: Introductionmentioning

confidence: 99%

Thin‐film‐growth characteristics by computer simulation: Nanostructural changes as a function of deposition conditions

Shahraki

Savaloni

2007

Physica Status Solidi (b)

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A 1 + 1 dimensional computer simulation model for thin-film deposition based on the ballistic aggregation of hard disks is developed, using the classical Monte Carlo method. The growth of thin metallic (e.g., Ni) and alloy (e.g., Co -Cr) films under different deposition conditions, considering the variation of different parameters, namely, substrate temperature, angle of incidence, substrate surface roughness (including amorphous substrates), and deposition rate, on a (111) face of fcc or a (100) face of hcp substrates is simulated. Results are qualitatively in good agreement with the structure zone model (SZM) predictions.

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On the residual stress developed in the nanostructure of computer simulated thin films

Jalali-Jafari

Savaloni

Shahraki

2007

Physica Status Solidi (b)

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A 1 + 1 dimensional computer simulation model based on aggregation of hard disks is used to investigate the relationship between the nanostructure of simulated thin metallic (e.g., Ni) films on the (111) face of fcc or the (100) face of hcp substrates under different deposition conditions and the stress developed in these films. The intrinsic mechanical stress in these films, while remaining almost constant up to a certain substrate temperature, passes a tensile stress maximum, which depends on the deposition rate, and decreases towards zero with increasing substrate temperature, owing to an increased diffusion process. By increasing the deposition angle, the microstructure of film changes from a dense film with few voids, to a microstructure with (somewhat densely packed) columns/bundles inclined towards the incidence atoms with elongated voids. The latter decreases the tensile stress, while the former increases the compressive stress, resulting in total compressive stress, particularly at deposition angles above 60°. The results are compared with the experiments performed on Ni/glass films that were produced under UHV condition and with different deposition parameters. The nanostrain in the latter films were obtained using the Warren -Averbach method for X-ray diffraction line-broadening analysis. A qualitatively good agreement between simulation and experimental results is obtained.

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Simulation of thin film growth

Cited by 12 publications

References 11 publications

Low Pressure Radio Frequency Ammonia Plasma Surface Modification on Poly(ethylene terephthalate) Films and Fibers: Effect of the Polymer Forming Process

Low Pressure Radio Frequency Ammonia Plasma Surface Modification on Poly(ethylene terephthalate) Films and Fibers: Effect of the Polymer Forming Process

Thin‐film‐growth characteristics by computer simulation: Nanostructural changes as a function of deposition conditions

On the residual stress developed in the nanostructure of computer simulated thin films

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