Simulation of the Properties of Betavoltaic Cells Based on Silicon and 63Ni Enriched Film

Abstract

Using a previously developed procedure for predicting the parameters of betavoltaic cells, we carry out calculations for cells based on a radioactive film enriched with 63 Ni up to 50% and real silicon structures, namely, a Ni/n-Si Schottky barrier and a p + -n diode. The procedure includes Monte Carlo calculation of the depth-dependent rate of the generation of β radiation by excess carriers and an experimental determination by SEM of the probability of their collection for specific structures. The need for such calculations is associated with the development of new possibilities of nickel enrichment with a radioactive isotope. We obtain achievable values of the short-circuit current, open-circuit voltage, filling factor, and cell power, which allows not only prediction of the parameters of such cells but also optimization of their structure. It is most expedient to use optimized p-n junctions in such cells.