Simulation of the material gain in quantum-well InGaAs layers used in 1.06-μm heterolasers

Batrak, D V; Bogatova, Sof'ya A; Borodaenko, Anna V; Drakin, A E; Bogatov, Alexandr P

doi:10.1070/qe2005v035n04abeh002909

Cited by 5 publications

(3 citation statements)

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“…The linewidth enhancement factor for the DBR tapered laser was α = 1.5 ± 0.1, measured following the method in [21] and is comparable to published values for similar material [22,23]. The time constants are based on the effective internal resonator length of ls = 5.5 mm and the mean external cavity length le = 350 mm.…”

Section: Dbr Tapered Lasersupporting

confidence: 80%

Measuring the sensitivity to optical feedback of single-frequency high-power laser diodes

et al. 2021

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Laser diodes, in general, are sensitive to optical feedback, especially with regards to maintaining single-frequency operation. Until now, however, the feedback sensitivity of high-power devices such as single-frequency DBR tapered laser diodes has not been investigated in quantitative detail. In this paper, we analyze the impact of very weak optical feedback between −105 dB and −40 dB on a high-power DBR tapered laser diode. The measurement set-up is validated using a typical DFB laser diode. The results are in good agreement with theory at low feedback levels.

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Section: Dbr Tapered Lasersupporting

confidence: 80%

Measuring the sensitivity to optical feedback of single-frequency high-power laser diodes

et al. 2021

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“…The α-factor correspondingly increases for N > N tr . The value ofα H = 1 was chosen in agreement with simulations [58] and is in basic agreement with measurements, where α-factors between 1 and 2 for a highly-strained InGaAs quantum well were obtained, depending on the detuning [62].…”

Section: Numerical Results For a Dbr Lasermentioning

confidence: 84%

Semiconductor Laser Linewidth Theory Revisited

et al. 2021

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More and more applications require semiconductor lasers distinguished not only by large modulation bandwidths or high output powers, but also by small spectral linewidths. The theoretical understanding of the root causes limiting the linewidth is therefore of great practical relevance. In this paper, we derive a general expression for the calculation of the spectral linewidth step by step in a self-contained manner. We build on the linewidth theory developed in the 1980s and 1990s but look from a modern perspective, in the sense that we choose as our starting points the time-dependent coupled-wave equations for the forward and backward propagating fields and an expansion of the fields in terms of the stationary longitudinal modes of the open cavity. As a result, we obtain rather general expressions for the longitudinal excess factor of spontaneous emission (K-factor) and the effective α-factor including the effects of nonlinear gain (gain compression) and refractive index (Kerr effect), gain dispersion, and longitudinal spatial hole burning in multi-section cavity structures. The effect of linewidth narrowing due to feedback from an external cavity often described by the so-called chirp reduction factor is also automatically included. We propose a new analytical formula for the dependence of the spontaneous emission on the carrier density avoiding the use of the population inversion factor. The presented theoretical framework is applied to a numerical study of a two-section distributed Bragg reflector laser.

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“…The device length of L DBR-TPL = 6 mm gives an internal round-trip time of τ s = 125 ps and the external round-trip time is again τ e = 2.3 ns. The linewidth enhancement factor of α = 2 is a typical value for a DBR tapered diode laser 6 with this epitaxial structure and this emission wavelength. The effective front facet reflectivity of R s = 0.0015 % is again the result of fitting eq.…”

Section: Figmentioning

confidence: 87%

Investigation of controlled external feedback on the properties of low and high-power frequency-stabilized diode laser

Zink

Christensen²,

Jamal³

et al. 2019

Novel in-Plane Semiconductor Lasers XVIII

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Unwanted optical feedback is a common problem in many optical setups of laser systems. To quantify the effect, the influence of a controlled external feedback on the emission properties of a low power distributed feedback ridge waveguide and a high power distributed Bragg reflector tapered diode laser are analyzed. The measured influence of the phase dependent feedback over several orders of magnitude in feedback power attenuation on emission wavelength is discussed and compared to theory.

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Simulation of the material gain in quantum-well InGaAs layers used in 1.06-μm heterolasers

Cited by 5 publications

References 0 publications

Measuring the sensitivity to optical feedback of single-frequency high-power laser diodes

Measuring the sensitivity to optical feedback of single-frequency high-power laser diodes

Semiconductor Laser Linewidth Theory Revisited

Investigation of controlled external feedback on the properties of low and high-power frequency-stabilized diode laser

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