Simulation of the Electrical Properties of Semiconductive BaTiO₃ Ceramic Varistors Using Continuum Theory

Abstract

A continuum field model describing the electrical characteristics of polycrystalline semiconductors ceramics is suggested. Taking into account the continuum theory, a static differential equation about electron level on the base of Poisson equation is established. The one-dimensional quantitative calculation is carried out using the Runge-Kutta method. The results show that as the applied voltage increases, the grain boundary barrier in the nonlinear zone drop drastically. The nonlinear characteristics of high temperature paraelectric phase is larger than that of room temperature ferroelectric phase.