Abstract:The deformation in the subthreshold region of the transfer characteristic observed in Amorphous Oxide Semiconductor (AOS) Thin-Film Transistors (TFTs) is simulated, analyzing its origin. We show that, when the density of positively charged states at the back interface between the active and the passivation layer becomes sufficiently high, a parallel current path is formed between drain and source at the back of the structure. This leakage current gives rise to a deformation or hump in the transfer curve. Durin… Show more
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