It is demonstrated that the efficiency of surface plasmon polariton excitation at a metal-semi conductor interface by active quantum dots can be determined from measurements of the polarization char acteristics of the output radiation. Experimentally, the proposed diagnostic method is based on finding the ratio of the intensities of the output radiation with polarizations orthogonal and parallel to the nanohetero structure plane for two different distances between the quantum dot layer and the metal-semiconductor interface. These data are then used to obtain the unknown parameters in the proposed mathematical model which makes it possible to calculate the rate of surface plasmon polariton excitation by active quantum dots. As a result, this rate can be determined without complicated expensive equipment for fast time resolved mea surements.