Abstract:The influence of different parameters of p-GaN/AlGaN/GaN structure on a threshold voltage of transistors is studied. The parameters that are varied are the thickness of the p-type GaN layer, its doping concentration, doping concentration of the GaN channel layer, and Schottky barrier height. Increasing the thickness of the p-GaN layer is found to increase the threshold voltage. Also, increasing doping concentration of the p-GaN layer increases the threshold voltage. The doping concentration of the GaN channel … Show more
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