Simulation of silicon heterostructure solar cell featuring dopant-free carrier-selective molybdenum oxide and titanium oxide contacts

Mehmood, Haris; Nasser, Hisham; Tauqeer, Tauseef; Turan, Raşit

doi:10.1016/j.renene.2019.05.007

Cited by 32 publications

(46 citation statements)

References 38 publications

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“…Table 1 tabulates the relevant electrical data for n-cSi, a-Si:H, and TiO x layers used in the simulation that have been extracted from the appropriate literature. 63,66,[68][69][70][71] The parameters for MoO x and defects states of a-Si:H have been extracted from our earlier reported works. 63 For physical device modelling of solar cells, it is pertinent to include relevant physical models in the simulation code that are needed to compute the essential output parameters of the studied devices.…”

Section: Tcad Modelling Of the Proposed Devicementioning

confidence: 99%

“…The front and rear passivation stacks of MoO x /a-Si:H and a-Si:H/n-a-Si:H were used where various parameters were analysed to evaluate the PV performance of the device. 63,64,66 An interface inversion was found to be observed with n-cSi wafer as a result of realizing MoO x with larger work function with an electron barrier height (Φ n ) of more than 1.55 eV and hole Schottky barrier height (Φ p ) of less than 0.12 eV. 63 Utilising the MoO x with low work function would increase the Φ p to 0.62 eV which is above than the threshold limit of 0.5 eV as required for effective charge transportation across the interface.…”

Section: Introductionmentioning

confidence: 99%

“…67 Hence, deterioration in the device performance was observed. Furthermore, another modelling study was also conducted where rear passivation stack of a-Si:H/TiO x was used instead of a-Si: H/n-a-Si:H. 66 It was shown that η exceeding the existent 22.5% for DASH device could be attained by reducing the series resistance, enhancing the optical response, minimizing interface recombination, along with optimisation of TMO and a-Si:H passivation layers.…”

Section: Introductionmentioning

confidence: 99%

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Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO ₂ as passivation layer

et al. 2020

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Conventional silicon heterojunction solar cells employ defects-prone a-Si:H layers for junction formation and passivation purposes. Substituting these layers with hole-selective MoO x and electron-selective TiO x can reduce parasitic absorption and energy band offsets issues associated with doped silicon films. In this work, dopant-free asymmetric heterostructure Si solar cells are studied with and without SiO 2 passivation layer, and their performance has been compared. The inclusion of ultrathin SiO 2 insulator as a passivation layer promotes significant band bending that induces interface inversion of crystalline silicon as well as maintains the electric field required to tunnel charge carriers. The energy band diagram studies and variation of oxide thickness show that the IV characteristics of the solar cell critically depend on the insulator thickness; as the carriers tunnelling through the insulator becomes negligible at larger thicknesses. The simulated structure with MoO x as front holeselective contact and without any passivation exhibited conversion efficiency of 15.73%, which improved to 18.69% by incorporating passivated a-Si:H. However, by employing rear SiO 2 /TiO x stack with the front SiO 2 /MoO x , the device performance enhanced to open-circuit voltage of 785 mV, short-circuit current density of 41 mA/cm 2 , fill factor of 77%, and simulated conversion efficiency of 24.83%, which is~10% enhancement in the performance as compared to reference device employing traditional a-Si:H with dopant-free films. Novelty Statement For the first time, a dopant-free asymmetric silicon heterostructure solar cell (DASH) employing silicon oxide (SiO 2) as a passivation layer has been physically modelled using Silvaco TCAD. The dopant-free MoO x and TiO x as holeand electron-selective contacts have been incorporated. An ultrathin SiO 2 promotes band bending that induces interface inversion of absorber as well as facilitating carrier tunnelling. An efficiency of 24.83% has been numerically attained which is the best performance among DASH structures designed with oxide passivation. The 2-D cross-section view of the proposed device employing dopant-free layers and oxide passivated film is illustrated in Figure 1 for which we have applied memory intensive numerical method based on the computation of Poisson, charge transport and continuity equations in the Silvaco ATLAS

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Section: Tcad Modelling Of the Proposed Devicementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO ₂ as passivation layer

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“…The hole selective behavior of MoO x contact has been proven in studies implementing it on n‐type c‐Si with and without passivation layer between c‐Si and MoO x . In an n‐type c‐Si/MoO x heterojunction, the large work function difference between c‐Si and MoO x induces a band bending that depletes the c‐Si's surface from electrons; thus, formation of this contact acts as a quasi‐p‐type hole collecting contact . MoO x has also been used in DMD structures, as MoO x /Ag/MoO x electrodes are shown to work successfully on c‐Si and organic solar cells …”

Section: Introductionmentioning

confidence: 99%

“…27,29,32,33 In an n-type c-Si/MoO x heterojunction, the large work function difference between c-Si and MoO x induces a band bending that depletes the c-Si's surface from electrons; thus, formation of this contact acts as a quasi-p-type hole collecting contact. 30,34,35 MoO x has also been used in DMD structures, as MoO x /Ag/MoO x electrodes are shown to work successfully on c-Si 18 and organic solar cells. 36 In this study, MoO x /Ag/MoO x hole transport TCE (HTTCE) multilayers that act both as TCE and hole selective contact, are fabricated via thermal evaporation, at room temperature, on n-type c-Si solar cells, as alternatives to doped p-type contacts and conventional TCEs layers.…”

Section: Introductionmentioning

confidence: 99%

MoO _x /Ag/MoO _x multilayers as hole transport transparent conductive electrodes for n‐type crystalline silicon solar cells

et al. 2020

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Summary Substitution of highly doped layers with conventional transparent conductive electrodes as carrier collecting and selective contacts in conventional crystalline silicon (c‐Si) solar cell configurations is crucial in increasing affordability of solar cells by lowering material costs. In this study, oxide/metal/oxide (OMO) multilayers featuring molybdenum oxide (MoOx) and silver (Ag) thin films are developed by thermal evaporation technique, as dopant‐free hole transport transparent conductive electrodes (HTTCEs) for n‐type c‐Si solar cells. Semidopant‐free asymmetric heterocontact (semi‐DASH) solar cells on n‐type c‐Si utilizing OMO multilayers are fabricated. The effect of outer MoOx layer thickness and Ag deposition rate on the photovoltaic characteristics of the fabricated semi‐DASH solar cells are investigated. A comparison of front side pyramid textured and flat surface solar cells is performed to optimize the optical and electrical properties. Highest efficiency of 9.3% ± 0.2% is achieved in a pyramid textured semi‐DASH c‐Si solar cell with 15/10/30 nm of HTTCE structure.

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Dopant‐free passivating contacts for crystalline silicon solar cells: Progress and prospects

Wang

Zhang

et al. 2022

EcoMat

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The evolution of the contact scheme has driven the technology revolution of crystalline silicon (c-Si) solar cells. The state-of-the-art high-efficiency c-Si solar cells such as silicon heterojunction (SHJ) and tunnel oxide passivated contact (TOPCon) solar cells are featured with passivating contacts based on doped Si thin films, which induce parasitic optical absorption loss and require capitalintensive deposition processes involving flammable and toxic gasses. A promising solution to tackle this problem is to employ dopant-free passivating contact, involving the use of transparent and cost-effective wide band gap materials. In this review, we first introduce the dopant-free passivating contact, from carrier transport mechanisms, material classification to evaluation methods. Then we focus on the advances in different strategies to improve cell performance, including material property optimization, structural and interfacial engineering, as well as various post-treatments. At the end, the challenge and perspective of dopant-free passivating contact c-Si solar cells are discussed.

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Simulation of silicon heterostructure solar cell featuring dopant-free carrier-selective molybdenum oxide and titanium oxide contacts

Cited by 32 publications

References 38 publications

Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO ₂ as passivation layer

Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO ₂ as passivation layer

MoO _x /Ag/MoO _x multilayers as hole transport transparent conductive electrodes for n‐type crystalline silicon solar cells

Dopant‐free passivating contacts for crystalline silicon solar cells: Progress and prospects

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Simulation of silicon heterostructure solar cell featuring dopant-free carrier-selective molybdenum oxide and titanium oxide contacts

Cited by 32 publications

References 38 publications

Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO 2 as passivation layer

Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO 2 as passivation layer

MoO x /Ag/MoO x multilayers as hole transport transparent conductive electrodes for n‐type crystalline silicon solar cells

Dopant‐free passivating contacts for crystalline silicon solar cells: Progress and prospects

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Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO ₂ as passivation layer

Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO ₂ as passivation layer

MoO _x /Ag/MoO _x multilayers as hole transport transparent conductive electrodes for n‐type crystalline silicon solar cells