Simulation of Ridge-Type Semiconductor Lasers with Selectively Proton-Implanted Cladding Layers

Abstract

A ridge-type semiconductor laser with selectively proton-implanted cladding layers is proposed, and lasing characteristics are simulated. In this laser, horizontal transverse modes are confined by the ridge structure; carrier distributions are controlled by selectively proton-implanted cladding layers. It is found that the kink level is higher and the threshold current is lower than those of ridge-type semiconductor lasers with optical antiguiding layers for horizontal transverse modes. In addition, the dependences of kink level and threshold current on the space between the proton-implanted regions ðSÞ are analyzed, and S is optimized. Horizontal and vertical near field patterns are almost independent of S; this result indicates that the light and carriers are confined separately.

High power single-sided Bragg reflection waveguide lasers with dual-lobed far field

“…1(b). In the calculations, the refractive index of In 0.2 Ga 0.8 As was selected as 3.65 at the 980 nm wavelength [15], and the refractive indices of the AlGaAs materials at room temperature (RT) were taken from Ref. [16].…”