We present measurements of ac complex resistivity, as well as dc resistivity, for a thick amorphous MoxSi1-x film at low temperatures ( T>0.04 K) in various constant fields B. We find that the vortex glass transition (VGT) persists down to T approximately 0.04Tc0 up to B approximately 0.9Bc2(0), where Tc0 and Bc2(0) are the mean-field transition temperature and upper critical field at T = 0, respectively. In the limit T-->0, the VGT line Bg(T) extrapolates to a field below Bc2(0), while the dc resistivity rho(T) tends to the finite nonzero value in fields just above Bg(0). These results indicate the presence of a metallic quantum vortex liquid at T = 0 in the regime Bg(0)