Simulation of polarization and butterfly hysteresis loops in bismuth layer-structured ferroelectric thin films

Abstract

Modeling of the hysteresis loop of ferroelectric thin films has been thought very difficult owing to its nonlinear and history-dependent electric field effects. Here we extend the Preisach model [Z. Phys. 94, 277 (1935)] by using the distribution function integral and superposition method. The model shows improved hysteresis loop that agrees reasonably well with the experimental data measured from the bismuth layer-structured ferroelectric thin films. Compared with the previous model, the current model provides polarization-field (P-E) loop with full and symmetric shape, suitable coercive field (Ec), and few undesirable parameters. The butterfly loop of perovskite-type ferroelectric thin films is also simulated. Additionally, the approach is able to describe the unsaturated loops obtained under various ac electric fields, which is very useful in circuit simulation of ferroelectric field effect transistor or ferroelectric capacitor.

Structure-property relations of co-doped bismuth layer-structured Bi3.25La0.75(Ti1-xMo x )3O12 ceramics

“…Remanent polarization and coercive field were found to increase after Mo 6+ was doped into BLT ceramics which were similar to a previous investigation on Nb-doped BLT ceramics [18]. Because of the temperature and field dependence of ferroelectric properties, i.e., remanent polarization and coercive field of ceramics [19,20], these parameters were normalized in a form of P r /P max and E c /E max values, where P max was the polarization value at the E max . These ratios are listed in Table 1 along with the values of R sq .…”

Interface-Charge-Coupled Polarization Response of Pt-BaTiO3-ZnO-Pt Heterojunctions: A Physical Model Approach

“…This model is based on approaches discussed previously for description of metal-ferroelectric-metal (MFM) electric hysteresis properties. 14,16,17 Our model expands the MFM approach by including the effects of the depletion layer formation inside the ZnO layer, and the interface charge coupling between the ZnO and BTO layers. The field-dependent ferroelectric polarization is described phenomenologically by the hyperbolic tangent function introduced by Miller.…”

Structure–property relations of ferroelectric Pb(Zr0.52Ti0.48)O3–(Bi3.25La0.75)Ti3O12 ceramics

“…both the coercive field and remanent polarization were increased to $18 kV/cm and $12.5 lC/ cm 2 , respectively. Because of the temperature and field dependence of ferroelectric properties of ceramics [14,15], these parameters have been normalized in a form of P r / P max and E c /E max values, where P max is the polarization value at the maximum applied field (E max ). These ratios are listed in Table 1 along with the values of loop squareness (R sq ) [12].…”