Simulation of photogenerated current of PN silicon photodetector enhanced by impurity photovoltaic effect

Mohammed, Wagah F.; Humoody, Mudhar A.; Al-Tikriti, Munther N.

doi:10.1016/j.rser.2013.05.067

Cited by 5 publications

(2 citation statements)

References 23 publications

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“…τ n , τ p : electron and hole life times respectively , V o the built in voltage and L is I-layer thickness. τ n and τ p can be calculated [14] as a function of the defect density:…”

Section: Mathematical Model Based On Shockley -Read -Hall (Srh) mentioning

confidence: 99%

Theoretical models and simulation of optoelectronic properties of a-Si-H PIN photosensors

Mohammed

Al-Tikriti

Aldabag

2014

International Journal on Smart Sensing and Intelligent Systems

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this research aims to study and discuss the theoretical models and simulation of optoelectronic properties of a-Si-H PIN photosensors based on Shockley-Read-Hall assumptions. The variation of carrier life time, recombination and generation rates as a function of the intrinsic layer (I-layer) thickness will be simulated using MATLAB program. The effects of intrinsic layer thickness on electrons and holes concentration, collection efficiency and short circuit current density have been studied and analyzed. It has been found that as the thickness increased, the parameters: recombination rate, generation rate, internal electric field, electrons and holes concentration, carriers' life times, and short circuit current density, were subjected to some variations.

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“…τ n , τ p : electron and hole life times respectively , V o the built in voltage and L is I-layer thickness. τ n and τ p can be calculated [14] as a function of the defect density:…”

Section: Mathematical Model Based On Shockley -Read -Hall (Srh) mentioning

confidence: 99%

Theoretical models and simulation of optoelectronic properties of a-Si-H PIN photosensors

Mohammed

Al-Tikriti

Aldabag

2014

International Journal on Smart Sensing and Intelligent Systems

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“…[6][7][8] This action would increase the current output and improve the responsivity of a photodetector. Mohammed et al [9] used the MATLAB program to calculate the photogenerated current in a PN silicon photodetector, enhanced by the impurity photovoltaic effect. Their results indicated that using the impurity photovoltaic effect can improve the photogenerated current of photodetectors and widen the operating wavelength range toward the near infrared region.…”

Section: Introductionmentioning

confidence: 99%

Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect

et al. 2015

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The near-infrared responsivity of a silicon photodetector employing the impurity photovoltaic (IPV) effect is investigated with a numerical method. The improvement of the responsivity can reach 0.358 A/W at a wavelength of about 1200 nm, and its corresponding quantum efficiency is 41.1%. The origin of the enhanced responsivity is attributed to the absorption of sub-bandgap photons, which results in the carrier transition from the impurity energy level to the conduction band. The results indicate that the IPV effect may provide a general approach to enhancing the responsivity of photodetectors.

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Different substitutions lead to differences in the transport and recombination properties of group V doped SiCNTs

Yang

Gong

et al. 2020

Physics Letters A

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Simulation of photogenerated current of PN silicon photodetector enhanced by impurity photovoltaic effect

Cited by 5 publications

References 23 publications

Theoretical models and simulation of optoelectronic properties of a-Si-H PIN photosensors

Theoretical models and simulation of optoelectronic properties of a-Si-H PIN photosensors

Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect

Different substitutions lead to differences in the transport and recombination properties of group V doped SiCNTs

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