Simulation of new p-type strip detectors with trench to enhance the charge multiplication effect in the n-type electrodes

Fernández-Martínez, P.; Pellegrini, G.; Balbuena, J.P.; Quirion, D.; Hidalgo, S.; Flores, D.; Lozano, M.; Casse, G.

doi:10.1016/j.nima.2011.04.056

Cited by 27 publications

(17 citation statements)

References 9 publications

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“…Ultra Fast Silicon Detectors, a new concept in silicon detector design, associate the best characteristics of standard silicon sensors with the main feature of Avalanche Photo Diodes (APD). UFSD are thin (typically 50µm thick) silicon Low Gain Avalanche Diodes (LGAD) [9], [10], that produce large signals showing hence a large dV /dt, a characteristic necessary to measure time accurately.…”

Section: Ultra Fast Silicon Detectormentioning

confidence: 99%

Test of UFSD Silicon Detectors for the TOTEM Upgrade Project

Arcidiacono,

Berretti,

Bossini

et al. 2017

Preprint

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This paper describes the performance of a prototype timing detector, based on 50 µm thick Ultra Fast Silicon Detector, as measured in a beam test using a 180 GeV/c momentum pion beam. The dependence of the time precision on the pixel capacitance and the bias voltage is investigated here. A timing precision from 30 ps to 100 ps, depending on the pixel capacitance, has been measured at a bias voltage of 180 V. Timing precision has also been measured as a function of the bias voltage.

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Section: Ultra Fast Silicon Detectormentioning

confidence: 99%

Test of UFSD Silicon Detectors for the TOTEM Upgrade Project

Arcidiacono,

Berretti,

Bossini

et al. 2017

Preprint

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“…This modification to usual sensor designs should increase the electric field close to the strips. Measurements after irradiation give both for 5 and 50 µm trenches an enhanced collected charge [26,27].…”

Section: Sensors With Enhanced Charge Multiplicationmentioning

confidence: 99%

Silicon Sensors for High-Luminosity Trackers â€“ RD50 Status Report

Kuehn¹

2015

Proceedings of Technology and Instrumentation in Particle Physics 2014 — PoS(TIPP2014)

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The revised schedule for the Large Hadron Collider (LHC) upgrade foresees a significant increase of the luminosity of the LHC by upgrading towards the HL-LHC (High Luminosity-LHC). The final upgrade is planned for around the year 2023, followed by the HL-LHC running. This is motivated by the need to harvest the maximum physics potential from the machine. It is clear that the high integrated luminosity of 3000 fb −1 will result in very high radiation levels, which manifest a serious challenge for the detectors. This is especially true for the tracking detectors installed close to the interaction point. For HL-LHC, all-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors to be employed in the innermost layers. Within the RD50 Collaboration, a massive R&D program is underway, with an open cooperation across experimental boundaries to develop silicon sensors with sufficient radiation tolerance. This report presents several research topics of the collaboration and highlights some recent results. Emphasize is given on results of sensors made from p-type silicon bulk, which have superior radiation hardness as they collect electrons instead of holes. A further area of activity is the development of advanced sensor types like active edges, thin, charge multiplication and 3D detectors. Results are shown from several detector technologies and silicon materials at radiation levels corresponding to HL-LHC fluences. Based on the results, recommendations are given for the silicon detectors to be used for LHC detector upgrades.

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“…2 shows the schematic description of this approach. Both types of structures have been simulated [6] with a T-CAD package, and possible electric field enhancement has been found. The sensors have been produced by IBN-CNM in Barcelona on 300 mm thick, high resistivity p-type bulk wafers (with expected full depletion voltage of about 80 V).…”

Section: Silicon Microstrip Detectors With Modified Junction Geometrymentioning

confidence: 99%