Simulation of large-scale silicon melt flow in magnetic Czochralski growth

Development of Solar Grade Silicon (SoG-Si) Feedstock by Recycling SoG-Si Wastes

“…For particles in the molten silicon, the electrical conductivity of the silicon melt (at melting temperature 1414C), SiC particle and Si 3 N 4 particle are 1.2910 6 S/m [55] , 10 S/m [56] respectively, indicating that the electrical conductivity of the silicon melt is at least 10 orders larger than that of the non-metallic inclusions. Thus, SiC and Si 3 N 4 particles will experience a strong repulsive force in the silicon melt.…”

The LHCb vertex locator

“…3D detectors, n-in-p sensors and pixels. In this paper, we report on a study of Magnetic Czochralski silicon (MCz) (6). Czochralski silicon has until recently not reached sufficient purity for use in particle detectors, even though it has been the standard crystal growth process for the electronics industry.…”

Development of Semiconductor Detectors for Very Harsh Radiation Environments in High Energy Physics Applications

“…High resistivity CZ suitable for detector application is now available after recent developments in the crystal growth technique (see e.g. [13]). Possible improvement in the radiation hardness beyond the level observed so far in DOFZ silicon can be expected, due to the higher O i content and possibly to the presence of oxygen dimers (O 2i ) [14].…”

“…3D detectors have been produced at Glasgow by plasma etching with 200µm thick silicon and 85µm pore spacing and characterised with I-V and C-V measurements. Several silicon 3D detectors were irradiated at the 300 MeV/c pion beam at the Paul Scherrer Institute (PSI), Villigen-CH, up to 12 10 , 13 10 , and 5. 10 14 cm -2 .…”