Simulation of heating of the target during high-power impulse magnetron sputtering

Karzin, V. V.; Komlev, А. Е.; Karapets, K.I.; Lebedev, N.K.

doi:10.1016/j.surfcoat.2017.11.049

Cited by 11 publications

(4 citation statements)

References 18 publications

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“…This group of methods includes pulsed methods such as High Power Magnetron Sputtering (HiPIMS). A variation in HTMS has also found positive effects in HiPIMS technology [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 98%

On the Control of Hot Nickel Target Magnetron Sputtering by Distribution of Power Pulses

et al. 2022

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This paper presents the experimental results of high-temperature sputtering of nickel targets by the Gas Injection Magnetron Sputtering (GIMS) technique. The GIMS technique is a pulsed magnetron sputtering technique that involves the generation of plasma pulses by injecting small doses of gas into the zone of the magnetron target surface. Using a target with a dedicated construction to limit heat dissipation and the proper use of injection parameters and electrical power density, the temperature of the target during sputtering can be precisely controlled. This feature of the GIMS technique was used in an experiment with sputtering nickel targets of varying thicknesses and temperatures. Plasma emission spectra and current-voltage waveforms were studied to characterize the plasma process. The thickness, structure, phase composition, and crystallite size of the nickel layers produced on silicon substrates were investigated. Our experiment showed that although the most significant increase in growth kinetics was observed for high temperatures, the low sputtering temperature range may be the most interesting from a practical perspective. The excited plasma has the highest energy in the sputtering temperature range, just above the Curie temperature.

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“…This group of methods includes pulsed methods such as High Power Magnetron Sputtering (HiPIMS). A variation in HTMS has also found positive effects in HiPIMS technology [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 98%

On the Control of Hot Nickel Target Magnetron Sputtering by Distribution of Power Pulses

et al. 2022

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“…Controllability and productivity of such processes can be largely improved through modification of existing technologies and the development of new approaches. In particular, one can find evidences of a positive effect that a high temperature of a magnetron target has on the stability of the characteristics of the reactive sputtering process [1]. On the other hand, a number of scientific groups have been actively studying reactive deposition of oxides and nitrides in the high-power pulsed magnetron discharges (see, e.g., [2] and references therein), and have found favorable effects of high-power pulses on the controllability of the process.…”

Section: Introductionmentioning

confidence: 99%

Modeling of reactive sputtering and evaporation in a hot-target magnetron discharge

Kolodko¹,

Sorokin²,

Kaziev³

2022

8th International Congress on Energy Fluxes and Radiation Effects

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We theoretically consider the joint influence of hot-target effects and the pulsed nature of the discharge on the state of the target surface. We enhance the previously modified time-dependent Berg model by taking into account the evaporation of target material as well as the influence of target temperature on the rate of chemical reactions on its surface. The system of equations describes the state of the target in terms of poisoned area fractions θ1 and θ2, where index 1 corresponds to the monoatomic surface layer, and index 2 – to the layer beneath the surface (subsurface layer). The processes of chemisorption on target surface, sputtering of reactive gas atoms from target, implantation of reactive gas ions to the sub-surface layer, material evaporation, and transfer between the layers are considered. A separate equation connects the atomic fluxes of reactive gas associated with target and substrate surfaces with the volumetric characteristics, such as gas injection rate and pumping speed. The system of equations is solved numerically, and test results are presented.

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“…For example, the direct simulation Monte Carlo (DSMC) model [11] can be used to calculate the movement and collision of neutral particles, so that the etching morphology can be mapped by determining the distribution of ions that sputter the target. Normally the plasma and neutral particles are assumed to be uniformly distributed in the background [12] and the type and probability of collisions are space independent thus giving rise to poor simulation accuracy [13]. In comparison, the test-electron Monte Carlo (MC) model [14] can yield the plasma discharge state by calculating the electron movement under the electromagnetic field and consequently the etching morphology.…”

Section: Introductionmentioning

confidence: 99%

High-precision modeling of dynamic etching in high-power magnetron sputtering

Cui¹,

Chen²,

Guo³

et al. 2022

J. Phys. D: Appl. Phys.

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Etching of the cathodes in magnetron sputtering determines the plasma discharge properties and deposition efficiency. In high-power and high-ionization discharges, etching becomes more complicated, resulting in inaccurate results if the conventional models are still used. This work aims at establishing an accurate dynamic model for high-power and high-ionization discharges by combining the cellular automata (CA) method and particle-in-cell/Monte Carlo collision (PIC/MCC) method, in which all the interactions pertaining to the etching morphology, plasma density, electric field, and magnetic field are considered. In high-power discharges such as continuous high-power magnetron sputtering (C-HPMS), strong self-sputtering and intense gas rarefaction stemming from the high temperature in the vicinity of the target influence the etching behavior. Compared to the experimental results, the morphology simulated by the dynamic etching model shows an error of only 0.8% in C-HPMS, which is much less than that obtained by the traditional test-electron Monte Carlo (MC) method (10.1%) and static PIC/MCC method (4.0%). The dynamic etching model provides more accurate results to aid the development and industrial application of high-power magnetron sputtering.

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Simulation of heating of the target during high-power impulse magnetron sputtering

Cited by 11 publications

References 18 publications

On the Control of Hot Nickel Target Magnetron Sputtering by Distribution of Power Pulses

On the Control of Hot Nickel Target Magnetron Sputtering by Distribution of Power Pulses

Modeling of reactive sputtering and evaporation in a hot-target magnetron discharge

High-precision modeling of dynamic etching in high-power magnetron sputtering

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